Pore sealing mechanism in OSG low‐ k films under ion bombardment

2019 ◽  
Vol 17 (2) ◽  
pp. 1900165 ◽  
Author(s):  
Ekaterina N. Voronina ◽  
Anastasia A. Sycheva ◽  
Dmitry V. Lopaev ◽  
Tatyana V. Rakhimova ◽  
Alexander T. Rakhimov ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Pore Sealing ◽  
Sealing Mechanism ◽  
Low K

Restoration and pore sealing of low-k films by UV-assisted processes

2014 ◽  
Author(s):  
Bo Xie ◽  
Kelvin Chan ◽  
David Cui ◽  
He Ren ◽  
Daemian Raj ◽  
...  
Keyword(s):  
Pore Sealing ◽  
Low K

Ultra- Thin Conformal Pore-Sealing of Low-k Materials by Plasma-Assisted ALD

2019 ◽  
Vol 11 (7) ◽  
pp. 167-176
Author(s):  
Joseph L. Cecchi ◽  
C. Jeffrey Brinker ◽  
Ying-Bing Jiang
Keyword(s):  
Pore Sealing ◽  
Low K

The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition

2012 ◽  
Vol 195 ◽  
pp. 146-149 ◽  
Author(s):  
Y. Sun ◽  
J. Swerts ◽  
P. Verdonck ◽  
A. Maheshwari ◽  
J.L. Prado ◽  
...  
Keyword(s):  
Plasma Temperature ◽  
Self Assembled Monolayers ◽  
Hydroxyl Groups ◽  
K Value ◽  
Oh Groups ◽  
Surface Hydroxyl ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Low K

Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 OH groups/nm2 is required. This surface modification must be carefully controlled to confine the k below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates.

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

2013 ◽  
Vol 1559 ◽  
Author(s):  
Yiting Sun ◽  
Elisabeth Levrau ◽  
Michiel Blauw ◽  
Johan Meersschaut ◽  
Patrick Verdonck ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Self Assembled Monolayers ◽  
Low Dielectric Constant ◽  
Hydroxyl Groups ◽  
Low Dielectric ◽  
Tin Film ◽  
Layer Deposition ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Low K

ABSTRACTIn this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

Study of Low-k Film Functionalization and Pore Sealing Using Chlorosilanes Dissolved in Supercritical Carbon Dioxide

2015 ◽  
Vol 203 (7) ◽  
pp. 880-889 ◽  
Author(s):  
Eduardo Vyhmeister ◽  
Lorenzo Reyes-Bozo ◽  
Roman Rodríguez-Maecker ◽  
Anthony Muscat ◽  
David Suleiman ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Supercritical Carbon Dioxide ◽  
Pore Sealing ◽  
Low K ◽  
Supercritical Carbon

Porous Low-k Wet Etch in HF-Based Solutions: Focus on Cleaning Process Window, "Pore-Sealing" and "k Recovery"

2009 ◽  
Vol 145-146 ◽  
pp. 295-302 ◽  
Author(s):  
Lucile Broussous ◽  
W. Puyrenier ◽  
D. Rebiscoul ◽  
V. Rouessac ◽  
A. Ayral
Keyword(s):  
Surface Layer ◽  
Process Window ◽  
Cleaning Process ◽  
Design Rules ◽  
Porosity Evolution ◽  
Pore Sealing ◽  
Modified Surface ◽  
Wet Etch ◽  
Low K ◽  
Modified Surface Layer

In this study, the compatibility of "HF-Based" cleaning with porous low-k integration, and “pore-sealing” approach was investigated, and specific attention was paid to ultra low-k porosity evolution. We also tried to demonstrate if "k-recovery" could be achieved by thinning the modified surface layer in the pattern trench walls (plasma damaged layer), for 65nm and 45 nm design rules.

Sign in / Sign up

Export Citation Format

Share Document