Stability and water wetting behavior of superhydrophobic polyurethane films created by hot embossing and plasma etching and coating

2019 ◽  
Vol 16 (6) ◽  
pp. 1800214 ◽  
Author(s):  
Jakob Barz ◽  
Michael Haupt ◽  
Christian Oehr ◽  
Thomas Hirth ◽  
Philipp Grimmer
Keyword(s):  
Plasma Etching ◽  
Hot Embossing ◽  
Wetting Behavior ◽  
Water Wetting

Fabrication, characterization and water wetting behavior of mesoscale 1D/2D periodic structured silica-zirconia sol–gel thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (52) ◽  
pp. 46048-46059 ◽  
Author(s):  
Saswati Sarkar ◽  
Shyamal Kumar Bhadra ◽  
Sunirmal Jana
Keyword(s):  
Thin Films ◽  
Capillary Force ◽  
Sol Gel ◽  
Wetting Behavior ◽  
Water Wetting ◽  
Capillary Force Lithography ◽  
Structured Silica

Capillary force lithography based 1D/2D mesoscale periodic structured silica zirconia sol–gel thin films having different water wetting behaviours.

Linear relationship between water wetting behavior and microscopic interactions of super-hydrophilic surfaces

2013 ◽  
Vol 139 (23) ◽  
pp. 234703 ◽  
Author(s):  
Jian Liu ◽  
Chunlei Wang ◽  
Pan Guo ◽  
Guosheng Shi ◽  
Haiping Fang
Keyword(s):  
Linear Relationship ◽  
Wetting Behavior ◽  
Hydrophilic Surfaces ◽  
Water Wetting ◽  
Microscopic Interactions

Visualization of Graphene on Various Substrates Based on Water Wetting Behavior

2016 ◽  
Vol 3 (6) ◽  
pp. 1500674 ◽  
Author(s):  
Kailun Xia ◽  
Muqiang Jian ◽  
Wenlin Zhang ◽  
Yingying Zhang
Keyword(s):  
Wetting Behavior ◽  
Water Wetting

scholarly journals Surface Composition and Micro-Water Wetting Behavior on Pure Chromium

2002 ◽  
Vol 66 (11) ◽  
pp. 1135-1142 ◽  
Author(s):  
Rongguang Wang ◽  
Naoki Morihiro ◽  
Takuji Okabe ◽  
Kouji Mukai ◽  
Mitsuo Kido
Keyword(s):  
Surface Composition ◽  
Wetting Behavior ◽  
Water Wetting ◽  
Pure Chromium

scholarly journals Influence of Distribution Size of Micro Energy Director Array on Ultrasonic Precise Sealing of Polymer MEMS Device

CONVERTER ◽  
2021 ◽  
pp. 50-58
Author(s):  
Miaomiao Zhang
Keyword(s):  
Hot Embossing ◽  
Wetting Behavior ◽  
Mems Device ◽  
Energy Director ◽  
Polymer Mems

In order to improve the quality and precision of ultrasonic precision sealing of polymer MEMS device, micro energy director array was proposed on the sealing surface of polymer MEMS device, the influence of the distribution size of micro energy director array to ultrasonic precise sealing was studied. Based on the experiment of PMMA micro-pipe sealing, five kinds of micro energy directors with different distribution sizes were made on the sealing surface by hot embossing technique. The method of ultrasonic precise sealing based on efficiency’s feedback was used and the influence of micro energy director array’s distribution size on the quality of ultrasonic sealing was summarized through the observation on the rule of wetting behavior of micro energy director array.

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

WETTING BEHAVIOR OF WATER MICRODROPLETS IN NATURAL EVAPORATION

2017 ◽  
Vol 48 (12) ◽  
pp. 1077-1088
Author(s):  
Yukihiro Yonemoto ◽  
Tomoaki Kunugi
Keyword(s):  
Wetting Behavior
Sign in / Sign up

Export Citation Format

Share Document