Near-field scanning microscopy and physico-chemical analysis versus time of SiCN:H thin films grown in Ar/NH3/TMS gas mixture using MW-Plasma CVD at 400 °C
2018 ◽
Vol 15
(10)
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pp. 1800066
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2001 ◽
Vol 62
(9-10)
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pp. 1643-1655
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2001 ◽
Vol 116
(1-3)
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pp. 333-337
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2004 ◽
2013 ◽
Vol 53
(9-11)
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pp. 1413-1417
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