Microwave PECVD Silicon Carbonitride Thin Films: A FTIR and Ellipsoporosimetry Study

2015 ◽  
Vol 13 (2) ◽  
pp. 258-265 ◽  
Author(s):  
Mathias Haacké ◽  
Romain Coustel ◽  
Vincent Rouessac ◽  
Stéphanie Roualdès ◽  
Anne Julbe
2021 ◽  
Vol 546 ◽  
pp. 149121
Author(s):  
Qiang Li ◽  
Cheng Chen ◽  
Manzhang Xu ◽  
Yingnan Wang ◽  
Xuewen Wang ◽  
...  

Author(s):  
Tsali Cross ◽  
Somuri Prasad ◽  
Rishi Raj

Polymer derived ceramics (PDC’s) are processed from liquid organometallic precursors by cross-linking the polymers into infusible solids, followed by controlled pyrolysis. No previous work regarding their tribology has been reported. Further, the synthesis of PDC’s as thin films, and the role that the nanostructure plays on the mechanical properties has not been reported. The objective of this research was to evaluate the fundamental tribological behavior of polymer derived SiCN in both bulk and thin film form. Friction and wear evaluations were made on bulk materials and thin films using a Si3N4 ballon-disk linear wear tester at various contact pressures and in different environments that contained various amounts of humidity. The micro/nanostructure was characterized by FTIR, microRaman, and scanning electron microscopy. Bulk SiCN gave a low friction coefficient and good wear resistance in humid environments but showed significant fracture and gouging in dry environments at higher contact pressures. Although there is ambiguity regarding the tribology of the thin films there seems to be a dependence upon the nitrogen content within the materials derived from the polymeric stage. The future work will focus on optimizing processing conditions of thin films and investigating the role that nitrogen plays in both bulk and thin film SiCN materials.


2019 ◽  
Vol 26 (04) ◽  
pp. 1850177 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
GUIBIN LEI ◽  
YUANJU GAN ◽  
YUEFENG CHEN

Hydrogenated silicon carbonitride (SiCN:H) thin films were deposited by sputtering of silicon carbide target in hydrogen-doped argon and nitrogen atmospheres. The properties of the SiCN:H films were analyzed by scanning electron microscopy with energy dispersive spectrometer, atomic force microscope, Fourier transform infrared spectroscopy, X-ray diffraction and fluorescence spectrophotometer. No distinct crystal was formed in the SiCN:H films as-deposited and annealed at 600∘C and 800∘C. The SiCN:H films were mainly composed of Si–N, Si–C, Si–O, C–C, C–N, C[Formula: see text]N, N–Hn bonds and SiCxNy network structure. The strong blue photoluminescence observed from the SiCN:H film annealed at 600∘C was attributed to SiCxNy network structure.


2018 ◽  
Vol 196 ◽  
pp. 504-510 ◽  
Author(s):  
Zahra Khatami ◽  
Patrick R.J. Wilson ◽  
Jacek Wojcik ◽  
Peter Mascher

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