High Quality SiO2-like Layers by Large Area Atmospheric Pressure Plasma Enhanced CVD: Deposition Process Studies by Surface Analysis

2009 ◽  
Vol 6 (10) ◽  
pp. 693-702 ◽  
Author(s):  
Peter Antony Premkumar ◽  
Sergey A. Starostin ◽  
Hindrik de Vries ◽  
Roger M. J. Paffen ◽  
Mariadriana Creatore ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Deposition Process ◽  
Large Area ◽  
High Quality ◽  
Plasma Enhanced Cvd ◽  
Pressure Plasma ◽  
Process Studies

Trajectory effect on the properties of large area ZnO thin films deposited by atmospheric pressure plasma jet

2014 ◽  
Vol 314 ◽  
pp. 1074-1081 ◽  
Author(s):  
Jia-Yang Juang ◽  
Tung-Sheng Chou ◽  
Hsin-Tien Lin ◽  
Yuan-Fang Chou ◽  
Chih-Chiang Weng
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Zno Thin Films ◽  
Atmospheric Pressure Plasma Jet ◽  
Large Area ◽  
Pressure Plasma

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

2008 ◽  
Vol 517 (1) ◽  
pp. 242-244 ◽  
Author(s):  
K. Yasutake ◽  
H. Ohmi ◽  
Y. Kirihata ◽  
H. Kakiuchi
Keyword(s):  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Atmospheric Pressure Plasma ◽  
Plasma Cvd ◽  
High Quality ◽  
Pressure Plasma

Improved GZO Thin Film Properties with SiOx Buffer Layer by Atmospheric Pressure Plasma Deposition

2014 ◽  
Vol 625 ◽  
pp. 196-200
Author(s):  
Kuo Hui Yang ◽  
Po Ching Ho ◽  
Je Wei Lin ◽  
Ta Hsin Chou ◽  
Kow Ming Chang
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Deposition Process ◽  
Good Alternative ◽  
Pressure Plasma ◽  
Electro Optic ◽  
Single Jet

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiOx could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiOx deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm2. GZO thin film with SiOx buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiOx/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.

Large area ashing process using an atmospheric pressure plasma

2011 ◽  
Vol 519 (20) ◽  
pp. 6746-6749 ◽  
Author(s):  
Seungryul Yoo ◽  
Taihyeop Lho ◽  
Dong Chan Seok ◽  
Yong Cheol Hong ◽  
Bongju Lee
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Large Area ◽  
Pressure Plasma

Atmospheric Pressure Plasma Enhanced CVD of Fe Nanoparticles

2019 ◽  
Vol 25 (8) ◽  
pp. 943-951 ◽  
Author(s):  
Sergei Alexandrov ◽  
Irina Kretusheva ◽  
Maxim V. Mishin
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Enhanced Cvd ◽  
Pressure Plasma ◽  
Fe Nanoparticles

Atmospheric Pressure Plasma-Enhanced CVD for Surface Modification: Principles and Applications

2006 ◽  
Vol 45 ◽  
pp. 1173-1177 ◽  
Author(s):  
Michael L. Hitchman ◽  
Sergei E. Alexandrov
Keyword(s):  
Surface Modification ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Dielectric Barrier Discharges ◽  
Thermal Nonequilibrium ◽  
Dielectric Barrier ◽  
Nonequilibrium Plasmas ◽  
Plasma Enhanced Cvd ◽  
Pressure Plasma ◽  
Barrier Discharges

This review gives an overview of the characteristics of various non-thermal, nonequilibrium plasmas and outlines results of AP-PECVD with dielectric barrier discharges.

Sign in / Sign up

Export Citation Format

Share Document