Chemically Resolved Depth Profiles Extracted from ARXPS Data Taken on Polystyrene Surfaces Exposed to Nitrogen Plasmas

2007 ◽  
Vol 4 (4) ◽  
pp. 406-413 ◽  
Author(s):  
R. W. Paynter ◽  
D. Roy-Guay
Keyword(s):  
Depth Profiles ◽  
Nitrogen Plasmas

Surface Functionalization, Oxygen Depth Profiles, and Wetting Behavior of PET Treated with Different Nitrogen Plasmas

2010 ◽  
Vol 2 (4) ◽  
pp. 980-990 ◽  
Author(s):  
Carmen López-Santos ◽  
Francisco Yubero ◽  
José Cotrino ◽  
Agustín R. González-Elipe
Keyword(s):  
Surface Functionalization ◽  
Wetting Behavior ◽  
Depth Profiles ◽  
Nitrogen Plasmas

Preparation of Backthinned Ceramic Specimens

1985 ◽  
Vol 43 ◽  
pp. 182-183
Author(s):  
A. T. Fisher ◽  
P. Angelini
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Vacuum System ◽  
Back Surface ◽  
Surface Microstructure ◽  
Ion Milling ◽  
Near Surface ◽  
Depth Profiles ◽  
Analytical Electron ◽  
Ion Implanted

Analytical electron microscopy (AEM) of the near surface microstructure of ion implanted ceramics can provide much information about these materials. Backthinning of specimens results in relatively large thin areas for analysis of precipitates, voids, dislocations, depth profiles of implanted species and other features. One of the most critical stages in the backthinning process is the ion milling procedure. Material sputtered during ion milling can redeposit on the back surface thereby contaminating the specimen with impurities such as Fe, Cr, Ni, Mo, Si, etc. These impurities may originate from the specimen, specimen platform and clamping plates, vacuum system, and other components. The contamination may take the form of discrete particles or continuous films [Fig. 1] and compromises many of the compositional and microstructural analyses. A method is being developed to protect the implanted surface by coating it with NaCl prior to backthinning. Impurities which deposit on the continuous NaCl film during ion milling are removed by immersing the specimen in water and floating the contaminants from the specimen as the salt dissolves.

scholarly journals Nanoindentation Hardness and Practical Scratch Resistance in Mechanically Tunable Anti-Reflection Coatings

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 213
Author(s):  
James J. Price ◽  
Tingge Xu ◽  
Binwei Zhang ◽  
Lin Lin ◽  
Karl W. Koch ◽  
...  
Keyword(s):  
High Hardness ◽  
Scratch Resistance ◽  
Test Methods ◽  
Consumer Electronics ◽  
Minimal Impact ◽  
Depth Profiles ◽  
Nanoindentation Hardness ◽  
Coating Durability ◽  
Design Freedom ◽  
Ar Coating

This work presents fundamental understanding of the correlation between nanoindentation hardness and practical scratch resistance for mechanically tunable anti-reflective (AR) hardcoatings. These coatings exhibit a unique design freedom, allowing quasi-continuous variation in the thickness of a central hardcoat layer in the multilayer design, with minimal impact on anti-reflective optical performance. This allows detailed study of anti-reflection coating durability based on variations in hardness vs. depth profiles, without the durability results being confounded by variations in optics. Finite element modeling is shown to be a useful tool for the design and analysis of hardness vs. depth profiles in these multilayer films. Using samples fabricated by reactive sputtering, nanoindentation hardness depth profiles were correlated with practical scratch resistance using three different scratch and abrasion test methods, simulating real world scratch events. Scratch depths from these experiments are shown to correlate to scratches observed in the field from consumer electronics devices with chemically strengthened glass covers. For high practical scratch resistance, coating designs with hardness >15 GPa maintained over depths of 200–800 nm were found to be particularly excellent, which is a substantially greater depth of high hardness than can be achieved using previously common AR coating designs.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

scholarly journals The effect of the graded bilayer design on the strain depth profiles and microstructure of Cu/W nano-multilayers

2021 ◽  
pp. 110002
Author(s):  
A.V. Druzhinin ◽  
G. Lorenzin ◽  
D. Ariosa ◽  
S. Siol ◽  
B.B. Straumal ◽  
...  
Keyword(s):  
Depth Profiles

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions

2012 ◽  
Vol 520 (13) ◽  
pp. 4439-4444 ◽  
Author(s):  
T.F. Schulze ◽  
L. Korte ◽  
B. Rech
Keyword(s):  
Depth Profiles
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