Micro-Structured Electrode Arrays: Characterization of High Frequency Discharges at Atmospheric Pressure

2005 ◽  
Vol 2 (3) ◽  
pp. 174-182 ◽  
Author(s):  
Lutz Baars-Hibbe ◽  
Philipp Sichler ◽  
Christian Schrader ◽  
Karl-Heinz Gericke ◽  
Stephanus Büttgenbach
Keyword(s):  
Atmospheric Pressure ◽  
High Frequency ◽  
Electrode Arrays

High frequency glow discharges at atmospheric pressure with micro-structured electrode arrays

2005 ◽  
Vol 38 (4) ◽  
pp. 510-517 ◽  
Author(s):  
L Baars-Hibbe ◽  
P Sichler ◽  
C Schrader ◽  
N Lucas ◽  
K-H Gericke ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
High Frequency ◽  
Electrode Arrays ◽  
Glow Discharges

Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma

2019 ◽  
Vol 25 (8) ◽  
pp. 405-412
Author(s):  
Keita Tabuchi ◽  
Kentato Ouchi ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake
Keyword(s):  
Atmospheric Pressure ◽  
High Frequency ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Si Films ◽  
Very High

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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