Band gap engineering of atomic layer deposited Znx Sn1-x O buffer for efficient Cu(In,Ga)Se2 solar cell

2018 ◽  
Vol 26 (9) ◽  
pp. 745-751 ◽  
Author(s):  
Raphael Edem Agbenyeke ◽  
Soomin Song ◽  
Bo Keun Park ◽  
Gun Hwan Kim ◽  
Jae Ho Yun ◽  
...  
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Atomic Layer ◽  
Band Gap Engineering

scholarly journals Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1128
Author(s):  
Armin Barthel ◽  
Joseph Roberts ◽  
Mari Napari ◽  
Martin Frentrup ◽  
Tahmida Huq ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Atomic Layer ◽  
Band Gap Energy ◽  
Wide Band Gap ◽  
Band Gap Engineering ◽  
Layer Deposition ◽  
Solar Blind ◽  
High Band

The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(TixGa1−x)2O3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga2O3.

Atomic Layer MoS2xTe2(1–x) Ternary Alloys: Two-Dimensional van der Waals Growth, Band gap Engineering, and Electrical Transport

2020 ◽  
Vol 12 (36) ◽  
pp. 40518-40524
Author(s):  
DongHwan Kim ◽  
Guen Hyung Oh ◽  
Ansoon Kim ◽  
ChaeHo Shin ◽  
Jonghoo Park ◽  
...  
Keyword(s):  
Band Gap ◽  
Electrical Transport ◽  
Van Der Waals ◽  
Atomic Layer ◽  
Ternary Alloys ◽  
Two Dimensional ◽  
Growth Band ◽  
Band Gap Engineering

Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application

2012 ◽  
Author(s):  
Neeraj Dwivedi ◽  
Sushil Kumar ◽  
Saurabh Dayal ◽  
C. M. S. Rauthan ◽  
O. S. Panwar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Amorphous Carbon ◽  
Solar Cell Application ◽  
Band Gap Engineering ◽  
Hydrogenated Amorphous Carbon ◽  
Carbon Thin Films ◽  
Hydrogenated Amorphous
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