A mechanism of solar cell degradation in high intensity, high temperature space missions

2011 ◽  
Vol 21 (4) ◽  
pp. 420-435 ◽  
Author(s):  
C. G. Zimmermann ◽  
C. Nömayr ◽  
M. Kolb ◽  
A. Rucki
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
High Intensity ◽  
Space Missions

PECVD based layers for improved high temperature industrial Solar cell processes

2019 ◽  
Author(s):  
Christophe Allebe ◽  
C. Ballif ◽  
Juan J. Diaz Leon ◽  
Andrea Ingenito ◽  
Antoine Descoeudres ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Cell Processes

Elevated temperature compressive properties of reaction milled NiAl–AlN and Zr-doped NiAl–AlN composites

1992 ◽  
Vol 7 (10) ◽  
pp. 2724-2732 ◽  
Author(s):  
J. Daniel Whittenberger ◽  
Michael J. Luton
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
High Intensity ◽  
Creep Resistance ◽  
High Strength ◽  
Milling Process ◽  
Compressive Properties ◽  
Reaction Milling ◽  
Nial Powder ◽  
Nial Matrix

Previous studies of a single lot of NiAl powder which had been ground under high intensity conditions in liquid nitrogen (cryomilling) indicated that this processing leads to a high strength, elevated temperature NiAl–AlN composite. Because this was the first known example of the use of the reaction milling process to produce a high temperature composite, the reproducibility of this technique was unknown. Two additional lots of NiAl powder and a lot of a Zr-doped NiAl powder have been cryomilled, and analyses indicate that AlN was formed within a NiAl matrix in all three cases. Compression testing between 1200 K and 1400 K has shown that the deformation resistance of these heats is similar to that of the first lot of NiAl–AlN; thus cryomilling can improve the creep resistance of NiAl by a factor of six. Based on this work, it is concluded that cryomilling of NiAl powder to form high temperature, high strength NiAl–AlN composites is a reproducible process.

scholarly journals Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication

2009 ◽  
Vol 156-158 ◽  
pp. 387-393 ◽  
Author(s):  
Jasmin Hofstetter ◽  
Jean F. Lelièvre ◽  
Carlos del Cañizo ◽  
Antonio Luque
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Silicon Solar Cell ◽  
Iron Concentration ◽  
Electron Lifetime ◽  
Slow Cooling ◽  
Metal Impurities ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
P Type

The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.

Ceramic IR Emitter with Spectral Match to GaSb PV Cells for TPV

2013 ◽  
Vol 1493 ◽  
pp. 11-22 ◽  
Author(s):  
Lewis M. fraas ◽  
Kuanrong Qiu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Temperature ◽  
Large Volume ◽  
Selective Emitter ◽  
Spectral Selectivity ◽  
Cell Conversion ◽  
Commercial Market ◽  
History Of ◽  
Spectral Match

ABSTRACTA high temperature ceramic selective emitter for thermophotovoltaic (TPV) electric generators is described with a spectral match to GaSb IR cells. While solar cells generate electricity quietly and are lightweight, traditional solar cells are used with sunlight and only generate electricity during the day. Workers at JX Crystals invented the GaSb IR cell as a booster cell to demonstrate a solar cell conversion efficiency of 35%. JX Crystals now makes these IR cells. In TPV, these cells can potentially be used with flame heated ceramic emitters to generate electricity quietly day and night. One of the most important requirements for TPV is a good spectral match between the ceramic IR emitted and the IR PV cells. The first problem is to find, demonstrate, and integrate a doped ceramic IR emitter with a spectral match to these GaSb cells. Recently, nickel oxide and cobalt oxide doped MgO-based ceramics have been shown experimentally and theoretically to have spectral selectivity but no attempts have been made to integrate these ceramic IR emitters into a fully operational TPV generator. Herein, we review the history of TPV and note that a key to future progress will be the integration of an appropriate ceramic emitter with cells and a burner to demonstrate an operational TPV generator. Integrating TPV into a residential boiler is discussed as a potential future large volume commercial market.

Fabrication of Simple GaAs Solar Cell by Zn Diffusion Method

2013 ◽  
Vol 684 ◽  
pp. 312-316 ◽  
Author(s):  
Sheng Po Chang
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Surface Morphology ◽  
Gaas Substrate ◽  
Substrate Surface ◽  
Temperature Treatment ◽  
High Temperature Treatment ◽  
Diffusion Method ◽  
Dopant Content ◽  
Zn Diffusion

We reported the spin-on Zincsilicafilm dopant content of the diffusion process and the formation of the p+ layer were applied to fabricate GaAs solar cells and their characteristics were investigated. The p-n junction was formed by a thermal furnace from the diffusion of zinc into the GaAs substrate. It was found that the GaAs substrate must be covered by a 100-nm-thick SiO2 layer. This reduced the damage to the GaAs substrate surface morphology that occurred during high temperature treatment and made the cleaning of the residual solvate on the surface easier

High temperature annealing of sprayed SnO2: F layers in a silicon solar cell process with screen-printed contacts

2006 ◽  
Vol 90 (12) ◽  
pp. 1797-1814 ◽  
Author(s):  
R. Tala-Ighil ◽  
M. Boumaour ◽  
M.S. Belkaïd ◽  
A. Maallemi ◽  
K. Melhani ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Temperature ◽  
Silicon Solar Cell ◽  
Cell Process ◽  
High Temperature Annealing ◽  
Screen Printed
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