Spatially separated atomic layer deposition of Al2 O3 , a new option for high-throughput Si solar cell passivation

2011 ◽  
Vol 19 (6) ◽  
pp. 733-739 ◽  
Author(s):  
B. Vermang ◽  
A. Rothschild ◽  
A. Racz ◽  
J. John ◽  
J. Poortmans ◽  
...  
2011 ◽  
Vol 1323 ◽  
Author(s):  
Ad Vermeer ◽  
F. Roozeboom ◽  
P. Poodt ◽  
Roger Gortzen

ABSTRACTAtomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (~ 1 nm/min). Recently, record deposition rates for alumina of up to 1 nm/s were reached using spatial ALD, while maintaining the typical assets regarding film quality as obtained by conventional, slow ALD [1]. This allows for ALD at high throughput numbers.One interesting application is passivation of crystalline silicon solar cells. Applying a thin alumina layer is reported to increase solar cell efficiency and enables the use of thinner wafers, thus reducing the main cost factor [2]. In this paper we report on the latest progress made by SoLayTec that delivered a working prototype of a system realizing full area single sided deposition of alumina on 156 x 156 mm2, mono- and multi crystalline silicon wafers for solar cell applications. The alumina layers showed excellent passivation. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/hr, making ALD ready for mass production. This will bring on new opportunities in other applications.


2015 ◽  
Vol 46 (1) ◽  
pp. 1043-1046 ◽  
Author(s):  
Hagyoung Choi ◽  
Seokyooon Shin ◽  
Yonghyuk Choi ◽  
Yeongtae Choi ◽  
Junghun Kim ◽  
...  

2019 ◽  
Vol 200 ◽  
pp. 109965 ◽  
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Daniel Lincot ◽  
Frédérique Donsanti

2009 ◽  
Vol 113 (42) ◽  
pp. 18385-18390 ◽  
Author(s):  
Tina C. Li ◽  
Márcio S. Góes ◽  
Francisco Fabregat-Santiago ◽  
Juan Bisquert ◽  
Paulo R. Bueno ◽  
...  

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