scholarly journals Influence of Nanoparticle Processing on the Thermoelectric Properties of (Bi x Sb 1−X ) 2 Te 3 Ternary Alloys

ChemistryOpen ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 189-198
Author(s):  
Sarah Salloum ◽  
Georg Bendt ◽  
Markus Heidelmann ◽  
Kateryna Loza ◽  
Samaneh Bayesteh ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Ternary Alloys ◽  
Nanoparticle Processing

Effects of varying indium composition on the thermoelectric properties of In x Ga1−x Sb ternary alloys

2016 ◽  
Vol 122 (10) ◽  
Author(s):  
V. Nirmal Kumar ◽  
M. Arivanandan ◽  
T. Koyoma ◽  
H. Udono ◽  
Y. Inatomi ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Ternary Alloys ◽  
Indium Composition

Theoretical investigation of the structural stabilities, optoelectronic and thermoelectric properties of ternary alloys NaInY2 (Y = S, Se and Te) through modified Becke–Johnson exchange potential

2020 ◽  
Vol 34 (13) ◽  
pp. 2050133 ◽  
Author(s):  
Muhammad Shahzad Yaseen ◽  
G. Murtaza ◽  
G. Murtaza
Keyword(s):  
Thermoelectric Properties ◽  
Density Of States ◽  
Solar Spectrum ◽  
Ternary Alloys ◽  
Index Formula ◽  
Enthalpies Of Formation ◽  
Exchange Potential ◽  
Partial Density ◽  
Total Density ◽  
Full Potential

The ground-state physical properties of compounds [Formula: see text] [Formula: see text] are investigated using all electron full potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method. These properties include thermoelectric, optical, electronic and structural properties. The generalized gradient approximation (GGA) due to Wu Cohen (WC) exchange potential for the exchange correlation (XC) effects was used. The modified Becke–Johnson (mBJ) approximation has also been exploited for the precise measurement of XC energy. The stability of crystal structures in tetragonal chalcopyrite phase was determined by calculating the enthalpies of formation. The electronic properties have been studied by plotting the total density of states (TDOS) and partial density of states (PDOS) as well as band structures. These properties show that all compounds have direct band gaps. By exploiting the imaginary part of the dielectric function [Formula: see text], optical properties such as energy loss spectrum [Formula: see text], reflectivity [Formula: see text], extinction coefficient [Formula: see text], refractive index [Formula: see text], optical conductivity [Formula: see text] and absorption coefficient [Formula: see text] were calculated. It can be seen that threshold absorption for all compounds occurs in the lower energy regions of solar spectrum. Thermoelectric properties like figure of merit (ZT), power factor (PF), electrical conductivity [Formula: see text], thermal conductivity [Formula: see text] and Seebeck coefficient [Formula: see text], were also calculated by employing Boltz Trap code. While studying transport properties, [Formula: see text] was found to be comparatively more efficient than [Formula: see text] [Formula: see text] having maximum value of ZT. Therefore, first principle study of these chalcopyrite compounds revels that they are promising materials for photovoltaics in the infrared and visible part of solar energy.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

In situ TEM observations of melting in nanosized eutectic Pb-Cd inclusions embedded in Al

1996 ◽  
Vol 54 ◽  
pp. 986-987
Author(s):  
S. Hagège ◽  
U. Dahmen ◽  
E. Johnson ◽  
A. Johansen ◽  
V.S. Tuboltsev
Keyword(s):  
Electron Microscope ◽  
Melt Spinning ◽  
Ternary Alloys ◽  
Solid Matrix ◽  
Eutectic System ◽  
In Situ Tem ◽  
In Situ Observation ◽  
Orientation Relationships ◽  
Transmission Electron

Small particles of a low-melting phase embedded in a solid matrix with a higher melting point offer the possibility of studying the mechanisms of melting and solidification directly by in-situ observation in a transmission electron microscope. Previous studies of Pb, Cd and other low-melting inclusions embedded in an Al matrix have shown well-defined orientation relationships, strongly faceted shapes, and an unusual size-dependent superheating before melting.[e.g. 1,2].In the present study we have examined the shapes and thermal behavior of eutectic Pb-Cd inclusions in Al. Pb and Cd form a simple eutectic system with each other, but both elements are insoluble in solid Al. Ternary alloys of Al (Pb,Cd) were prepared from high purity elements by melt spinning or by sequential ion implantation of the two alloying additions to achieve a total alloying addition of up to lat%. TEM observations were made using a heating stage in a 200kV electron microscope equipped with a video system for recording dynamic behavior.

Electron microscope studies of the plastic deformation of ternary alloys based on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 1120-1120
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley
Keyword(s):  
Plastic Deformation ◽  
Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
The Other ◽  
Ternary Alloys ◽  
Dislocation Mobility ◽  
Semiconducting Materials ◽  
Micro Indentation

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.

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