Thermoelectric properties of Bi2Te3-Sb2Te3-Sb2Se3 pseudo-ternary alloys in the temperature range 77 to 300� K

1966 ◽  
Vol 1 (1) ◽  
pp. 52-65 ◽  
Author(s):  
W. M. Yim ◽  
E. V. Fitzke ◽  
F. D. Rosi
Keyword(s):  
Thermoelectric Properties ◽  
Ternary Alloys ◽  
Temperature Range

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

scholarly journals Preparation and Thermoelectric Properties of Graphite/poly(3,4-ethyenedioxythiophene) Nanocomposites

Energies ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2849 ◽  
Author(s):  
Yong Du ◽  
Haixia Li ◽  
Xuechen Jia ◽  
Yunchen Dou ◽  
Jiayue Xu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Oxidative Polymerization ◽  
Polymerization Process ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Content

Graphite/poly(3,4-ethyenedioxythiophene) (PEDOT) nanocomposites were prepared by an in-situ oxidative polymerization process. The electrical conductivity and Seebeck coefficient of the graphite/PEDOT nanocomposites with different content of graphite were measured in the temperature range from 300 K to 380 K. The results show that as the content of graphite increased from 0 to 37.2 wt %, the electrical conductivity of the nanocomposites increased sharply from 3.6 S/cm to 80.1 S/cm, while the Seebeck coefficient kept almost the same value (in the range between 12.0 μV/K to 15.1 μV/K) at 300 K, which lead to an increased power factor. The Seebeck coefficient of the nanocomposites increased from 300 K to 380 K, while the electrical conductivity did not substantially depend on the measurement temperature. As a result, a power factor of 3.2 μWm−1 K−2 at 380 K was obtained for the nanocomposites with 37.2 wt % graphite.

Ultra-low thermal conductivity and high thermoelectric performance realized in a Cu3SbSe4 based system

2021 ◽  
Vol 5 (1) ◽  
pp. 324-332
Author(s):  
J. M. Li ◽  
H. W. Ming ◽  
B. L. Zhang ◽  
C. J. Song ◽  
L. Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Low Thermal Conductivity ◽  
Sn Doping ◽  
Temperature Range ◽  
System P

Cu3SbSe4-Based materials were fabricated through Sn-doping and AgSb0.98Ge0.02Se2 incorporation and their thermoelectric properties were investigated in the temperature range from 300 K to 675 K.

scholarly journals Effect of band structure adjustment based of Cu site on the thermoelectric properties of BiCuSeO

2021 ◽  
Author(s):  
Bo Feng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Density Of States ◽  
First Principles Calculation ◽  
Temperature Range ◽  
Ti Doping

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

Nanostructuring SnTe to improve thermoelectric properties through Zn and Sb co-doping

2020 ◽  
Vol 4 (11) ◽  
pp. 5645-5653
Author(s):  
Samuel Kimani Kihoi ◽  
Ho Seong Lee
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Temperature Range ◽  
Co Doping

A complex microstructure resulting in SnTe based thermoelectric materials with improved properties in the mid temperature range.

Thermoelectric Properties of Doped Iron Disilicide

2000 ◽  
Vol 626 ◽  
Author(s):  
Jun-ichi Tani ◽  
Hiroyasu Kido
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Measured Temperature ◽  
Iron Disilicide ◽  
Measured Temperature Range ◽  
Temperature Range

ABSTRACTIn order to investigate the thermoelectric properties of Re-doped β-FeSi2 (Fe1-xRexSi2), Ir-doped β-FeSi2 (Fe1-xIrxSi2), and Pt-doped β-FeSi2 (Fe1-xPtxSi2), the electrical resistivity, the Seebeck coefficient, and the thermal conductivity of these samples have been measured in the temperature range between 300 and 1150 K. Fe1-xRexSi2 is p-type, while Fe1-xIrxSi2 and Fe1-xPt xSi2 are n-type over the measured temperature range. The solubility limits of dopant are estimated to be 0.2at% for Fe1-xRexSi2, 0.5at% for Fe1-xIrxSi2, and 1.9at% for Fe1-xPtxSi2. A maximum ZT value of 0.14 was obtained for Fe1-xPt xSi2 (x=0.03) at the temperature 847 K.

Thermoelectric Properties of Bi2Te3-ySey Bulk Materials Synthesized by Melting-Grinding Process

2018 ◽  
Vol 773 ◽  
pp. 145-151
Author(s):  
Min Soo Park ◽  
Gook Hyun Ha ◽  
Hye Young Koo ◽  
Yong Ho Park
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermal Characteristics ◽  
Grinding Process ◽  
Alloy Scattering ◽  
Temperature Range ◽  
P Type ◽  
Optimal Effect

The Bi–Te thermoelectric system shows an excellent figure of merit (ZT) near room temperature. Research on increasing the ZT value for n‑type Bi–Te is imperative because the thermoelectric properties of this compound are inferior to those of the p-type material. For this purpose, n-type Bi2Te3-ySey powders with various amounts of Se dopant (0.3 ≤ y ≤ 0.6) were synthesized by a vacuum melting-grinding process to improve the physical properties. The ZT value of the sintered bodies was investigated in the temperature range of 298–423 K with regard to the electrical and thermal characteristics. As the Se content increased, the electrical conductivity decreased owing to a reduction in the carrier concentration, which improved the overall value of ZT. The thermal conductivity clearly decreased as the Se content increased in the temperature range of 298–373 K due to increased alloy scattering, as well as a reduction in the lattice thermal conductivity caused by crystal grain boundary scattering. At room temperature, Bi2Te2.7Se0.3 (y = 0.3) exhibited the highest ZT of 0.85. At increased temperatures, the ZT value was highest for Bi2Te2.55Se0.45 (y = 0.45), indicating that the optimal effect of the Se dopants varies depending on the temperature range.

Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si3N4 nanoparticles

RSC Advances ◽  
2015 ◽  
Vol 5 (43) ◽  
pp. 34251-34256 ◽  
Author(s):  
Y. C. Dou ◽  
X. Y. Qin ◽  
D. Li ◽  
Y. Y. Li ◽  
H. X. Xin ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
Amorphous Si ◽  
Amorphous Si3n4

Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (<1 vol%) of amorphous Si3N4 (a-Si3N4) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K.

Thermoelectric Properties of High Density Sintered Ca3Co2O6

2008 ◽  
Vol 54 ◽  
pp. 211-215 ◽  
Author(s):  
Takeo Uesugi ◽  
Hitoshi Kohri ◽  
Ichiro Shiota ◽  
Masahiko Kato ◽  
Isao J. Ohsugi
Keyword(s):  
Solid State ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Hot Pressing ◽  
Temperature Limit ◽  
Thermoelectric Oxide ◽  
Temperature Range ◽  
Seebeck Coefficients ◽  
The One ◽  
Lower Resistivity

Ca3Co4O9 is a promising material for thermoelectric generation, as it is stable up to 1173 K in the air, and shows good thermoelectric properties. Recently, it was found that Ca3Co2O6 was stable up to 1300 K in the air. The Ca3Co2O6 is decomposed phase of Ca3Co4O9 and the temperature limit is higher than one of Ca3Co4O9. The electrical resistivity of Ca3Co2O6 was, however, higher than the one of Ca3Co4O9. Not only high power generation performances but also excellent strength is required for practical use of the thermoelectric oxide materials. Polycrystalline samples of Ca3Co2O6 were prepared by solid-state reaction (SSR) and hot pressing (HP). Relative density of Ca3Co2O6 (HP) was over 98%, which is larger than the one of Ca3Co2O6 (SSR). Ca3Co2O6 (HP) showed larger strength and lower resistivity than Ca3Co2O6 (SSR). The resistivity (ρ) of Ca3Co2O6 (HP) in perpendicular to the pressurized direction decreased from 64 Ωcm to 4.0×10-2 Ωcm at the temperature range between 373 and 1173 K. In addition, the resistivity of this sample was decreased by heat treatment in the air. The Seebeck coefficients (S) of Ca3Co2O6 (HP) was positive value and more than 160 μVK-1 at the temperature range between 373 and 1173 K. Ca3Co1.8M0.2O6 (M= Mn or V) were prepared by solid state reaction and hot pressing. The resistivity of Mn-substituted Ca3Co2O6 (HP-Mn) and V-substituted Ca3Co2O6 (HP-V) were lower than the one of non-substituted Ca3Co2O6 (HP) at the temperature below 523 K for the Mn-substituted sample or 723 K for V-substituted sample. The latter showed the lowest value 1.53 Ωcm of all specimens at 383 K. The power factor (S2ρ-1) of Ca3Co2O6 (HP) was 88.3 μWm-1K-2, which is the largest of all specimens at 1176 K, but S2ρ-1 of V-substituted Ca3Co2O6 (HP-V) is the largest of all specimens up to 773 K.

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