Sheet resistivity measurements at microwave frequencies

1995 ◽  
Vol 8 (5) ◽  
pp. 244-247
Author(s):  
V. P. McGinn
Keyword(s):  
Sheet Resistivity ◽  
Microwave Frequencies ◽  
Resistivity Measurements

Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon

1984 ◽  
Vol 33 ◽  
Author(s):  
D. J. Sharp ◽  
J. K. G. Panitz ◽  
C. H. Seager
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Columnar Structure ◽  
Hydrogen Transport ◽  
Transport Mechanisms ◽  
Sheet Resistivity ◽  
Near Surface ◽  
Resistivity Measurements ◽  
Transmission Electron ◽  
Defect Passivation

ABSTRACTA combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 181 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

ABSTRACTThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron-induced x-ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000°C. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650°C for 30min annealing. The Co silicide and Si layers are intermixed after 750°C 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900°C but is stable on polycrystalline silicon as high as 800°C. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Hall effect and sheet resistivity measurements on ion-bombarded InSb

1975 ◽  
Vol 31 (1) ◽  
pp. K69-K71 ◽  
Author(s):  
K.-H. Wiedeburg ◽  
H. Betz ◽  
H. Kranz
Keyword(s):  
Hall Effect ◽  
Sheet Resistivity ◽  
Resistivity Measurements
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