High-speed modulation of GaAs/AlGaAs multiple-quantum-well (MQW) asymmetric Fabry-Perot (ASFP) reflection modulator

1994 ◽  
Vol 7 (3) ◽  
pp. 128-132
Author(s):  
M. Nawaz ◽  
Borgar T. Olsen ◽  
K. MaCilvaney
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Speed Modulation ◽  
Fabry Perot ◽  
High Speed Modulation

High-speed modulation of strain-compensated InGaAs-GaAsP-InGaP multiple-quantum-well lasers

1996 ◽  
Vol 8 (9) ◽  
pp. 1133-1135 ◽  
Author(s):  
H. Han ◽  
P.N. Freeman ◽  
W.S. Hobson ◽  
N.K. Dutta ◽  
J. Lopata ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Speed Modulation ◽  
High Speed Modulation

HIGH-SPEED RESPONSE OF GaAs/AlGaAs MULTIPLE QUANTUM WELL (MQW) ASYMMETRIC FABRY PEROT (ASFP) REFLECTION MODULATOR

1993 ◽  
Vol 07 (08) ◽  
pp. 533-541
Author(s):  
M. NAWAZ ◽  
B. T. OLSEN ◽  
K. McILVANEY
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Contrast Ratio ◽  
Multiple Quantum ◽  
Driving Voltage ◽  
Operating Wavelength ◽  
Response Bandwidth ◽  
Fabry Perot ◽  
Speed Response

The results of the high-speed response of GaAs/AlGaAs multiple quantum well (MQW) based asymmetric Fabry Perot (ASFP) reflection modulator are presented. The measured 3 dB electrical frequency response bandwidth of the modulator was 600 MHz. The contrast ratio of the modulator was 8.9 dB for a driving voltage of 13 V, at an operating wavelength of 862 nm.

Electroabsorption of Unstrained InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrates

1997 ◽  
Vol 08 (04) ◽  
pp. 587-598 ◽  
Author(s):  
Ching-Ting Lee ◽  
Tzer-En Nee
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Mbe Growth ◽  
Quantum Well Structures ◽  
Practical Applications ◽  
Gaas Substrates ◽  
Speed Modulation

Large electroabsorption was observed in InGaAs/InAlGaAs multiple quantum well structures grown on GaAs substrates operating near 1.3 μm. The molecular beam epitaxy (MBE) growth of these structures was incorporation of a carefully designed InAlAs multistage strain-relaxed buffer. The optical absorption spectra as a function of the reverse bias at room temperature are shown. The good characteristics of the optical modulators fabricated on this structure have indicated its potential for practical applications of high-speed modulation.

Analysis of mode-hopping effect in Fabry–Pérot multiple-quantum well laser diodes via low frequency noise investigation

2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Mode Hopping ◽  
Multiple Quantum Well Laser
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