Performance comparison of RF energy harvesting rectifiers designed in CMOS FDSOI 28 nm with dynamic back gate biasing and BiCMOS 55 nm technology

Author(s):  
Mohamad Awad ◽  
Philippe Benech ◽  
Jean‐Marc Duchamp
IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Nermeen A. Eltresy ◽  
Abd Elhamid M. Abd Elhamid ◽  
Dalia N. Elsheakh ◽  
Hadia M. Elhennawy ◽  
Esmat A. Abdallah

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