66 GHz bias‐dependent equivalent circuit model for CMOS transistor based on 90 nanometers CMOS technology

2018 ◽  
Vol 60 (7) ◽  
pp. 1808-1812 ◽  
Author(s):  
Yunqiu Wu ◽  
Shili Cong ◽  
Chenxi Zhao ◽  
Huihua Liu ◽  
Kai Kang
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Cmos Technology ◽  
Circuit Model ◽  
Cmos Transistor

RF CMOS Transistor Equivalent Circuit Model up to 66 GHz

2018 ◽  
Author(s):  
Muhammad Adil Bashir ◽  
Yunqiu Wu ◽  
Yiming Yu ◽  
Chenxi Zhao ◽  
Hongyan Tang ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Rf Cmos ◽  
Cmos Transistor

Validation and parameter extraction of a compact equivalent circuit model for an RF CMOS transistor

2020 ◽  
Vol 19 (4) ◽  
pp. 1471-1477
Author(s):  
Junaid Ahmed Uqaili ◽  
Rabnawaz Sarmad Uqaili ◽  
Saleemullah Memon ◽  
Kamlesh Kumar Soothar ◽  
Kamran Ali Memon ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Parameter Extraction ◽  
Circuit Model ◽  
Rf Cmos ◽  
Cmos Transistor

Novel Equivalent Circuit Model for Spiral Inductors on Lossy Silicon Substrate

2013 ◽  
Vol 300-301 ◽  
pp. 1003-1007
Author(s):  
Juan Zou ◽  
Zhe Nan Tang
Keyword(s):  
Equivalent Circuit ◽  
Silicon Substrate ◽  
Equivalent Circuit Model ◽  
Magnetic Coupling ◽  
Cmos Technology ◽  
Circuit Model ◽  
Lateral Resistance ◽  
Proposed Model ◽  
Spiral Inductors ◽  
Numerical Formulation

Abstract. A fast and accurate equivalent circuit model for spiral inductors on lossy silicon substrate is presented and the parameters of the model are extracted without applying any fitting and optimized methods. In this model, the lateral resistance and inductance of substrate are introduced to model the eddy-current losses induced by magnetic coupling between the spiral and the substrate. FastHenry method is used to extract the inductances of spiral, substrate, and the mutual inductance between them. A numerical formulation is used to efficiently capture the proximity and skin effects in metal tracks. The proposed model is used to predict the performance of two typical spiral inductors fabricated in CMOS technology. The model shows excellent accuracy and efficiency by the comparison with measure results at the frequency from 100MHz to 10GHz.

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner

scholarly journals A Novel, Improved Equivalent Circuit Model for Double-Sided Linear Induction Motor

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1644
Author(s):  
Qian Zhang ◽  
Huijuan Liu ◽  
Tengfei Song ◽  
Zhenyang Zhang
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Equivalent Circuit ◽  
Skin Effect ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Circuit Model ◽  
End Effects ◽  
3D Finite Element ◽  
Linear Induction

A novel, improved equivalent circuit model of double-sided linear induction motors (DLIMs) is proposed, which takes the skin effect and the nonzero leakage reactance of the secondary, longitudinal, and transverse end effects into consideration. Firstly, the traditional equivalent circuit with longitudinal and transverse end effects are briefly reviewed. Additionally, the correction coefficients for longitudinal and transverse end effects derived by one-dimensional analysis models are given. Secondly, correction factors for skin effect, which reflects the inhomogeneous air gap magnetic field vertically, and the secondary leakage reactance are derived by the quasi-two-dimensional analysis model. Then, the proposed equivalent circuit is presented, and the excitation reactance and secondary resistance are modified by the correction coefficients derived from the three analytical models. Finally, a three-dimensional (3D) finite element model is used to verify the proposed equivalent circuit model under varying air gap width and frequency, and the results are also compared with that of the traditional equivalent circuit models. The calculated thrust characteristics by the proposed equivalent circuit and 3D finite element model are experimentally validated under a constant voltage–frequency drive.

Mesh Dependency on a Partial Element Equivalent Circuit Model for an NI HTS Coil

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Chaemin Im ◽  
Geonyoung Kim ◽  
Jeseok Bang ◽  
Kibum Choi ◽  
Soobin An ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Mesh Dependency ◽  
Partial Element Equivalent Circuit ◽  
Partial Element
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