High-power ultra-wideband electrical-pulse generation using a doped silicon photoconductive switch

2005 ◽  
Vol 48 (1) ◽  
pp. 121-125 ◽  
Author(s):  
B. Vergne ◽  
V. Couderc ◽  
A. Barthélémy ◽  
M. Lalande ◽  
V. Bertrand ◽  
...  
Keyword(s):  
High Power ◽  
Pulse Generation ◽  
Electrical Pulse ◽  
Ultra Wideband ◽  
Photoconductive Switch ◽  
Doped Silicon

scholarly journals A Compact High-Power Ultra-Wideband Bipolar Pulse Generator

2021 ◽  
Vol 2021 ◽  
pp. 1-8
Author(s):  
Zhaoyang Wu ◽  
Wei Lu ◽  
Enyan Ding ◽  
Xiangyang Bao ◽  
Zhoubing Yang ◽  
...  
Keyword(s):  
Transmission Line ◽  
Transmission Lines ◽  
High Power ◽  
Pulse Generator ◽  
Pulse Generation ◽  
Ultra Wideband ◽  
Marx Generator ◽  
Bipolar Pulse ◽  
Peak Voltage ◽  
Spark Gap

A compact high-power ultra-wideband bipolar pulse generator based on a modified Marx circuit is designed, which is mainly composed of a primary power supply, Marx generator, sharpening and cutoff subnanosecond spark gap switches, and coaxial transmission lines. The Marx generator with modified circuit structure has thirty-two stages and is composed of eight disk-like modules. Each module consists of four capacitors, two spark gap switches, four charging inductors, and a mechanical support. To simplify the design of the charging structure and reduce the number of switches, four groups of inductors are used to charge the capacitors of the Marx generator, two of which are used for positive voltage charging and the other two for negative voltage charging. When the capacitor of each stage is charged to 35 kV, the maximum output peak voltage can reach 1 MV when the Marx generator is open circuit. The high-voltage pulse generated by the Marx generator charges the transmission line and forms a bipolar pulse through sharpening and cutoff switches. All transmission lines used for bipolar pulse generation have an impedance of 10 Ω. When the 950 kV pulse voltage generated by the Marx generator is fed into the transmission line, the bipolar pulse peak voltage can reach 390 kV, the center frequency of the pulse is about 400 MHz, and the output peak power is about 15.2 GW.

Experiment study on high power ultra-wideband pulse generation

2011 ◽  
Vol 23 (11) ◽  
pp. 2929-2932
Author(s):  
陆巍 Lu Wei ◽  
陈志刚 Chen Zhigang ◽  
张现福 Zhang Xianfu ◽  
杨周炳 Yang Zhoubing ◽  
丁恩燕 Ding Enyan ◽  
...  
Keyword(s):  
High Power ◽  
Pulse Generation ◽  
Ultra Wideband ◽  
Experiment Study

Scalable Ultra-Wideband Pulse Generation Based on Silicon Photonic Integrated Circuits

2017 ◽  
Vol 29 (21) ◽  
pp. 1896-1899 ◽  
Author(s):  
Xinru Wu ◽  
Ke Xu ◽  
Wen Zhou ◽  
Chi Wai Chow ◽  
Hon Ki Tsang
Keyword(s):  
Integrated Circuits ◽  
Photonic Integrated Circuits ◽  
Pulse Generation ◽  
Ultra Wideband ◽  
Silicon Photonic

High-power sources of ultra-wideband radiation with subnanosecond pulse lengths

2011 ◽  
Vol 54 (1) ◽  
pp. 70-76 ◽  
Author(s):  
A. M. Efremov ◽  
V. I. Koshelev ◽  
B. M. Kovalchuk ◽  
V. V. Plisko ◽  
K. N. Sukhushin
Keyword(s):  
High Power ◽  
Ultra Wideband ◽  
Power Sources

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

1991 ◽  
Vol 240 ◽  
Author(s):  
J. H. Zhao ◽  
R. Lis ◽  
D. Coblentz ◽  
J. Illan ◽  
S. McAfee ◽  
...  
Keyword(s):  
High Power ◽  
High Concentration ◽  
Photoconductive Switch ◽  
Turn On ◽  
Power Handling ◽  
Switched Current ◽  
Power Handling Capability ◽  
Pn Junctions ◽  
Switching Characteristics ◽  
Switch Voltage

ABSTRACTAn MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

Power scaling of high-power optically pumped semiconductor lasers for continuous wave and ultrashort pulse generation

2012 ◽  
Author(s):  
Alexandre Laurain ◽  
Maik Scheller ◽  
Tsuei-Lian Wang ◽  
Jorg Hader ◽  
Jerome V. Moloney ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Ultrashort Pulse ◽  
Continuous Wave ◽  
Pulse Generation ◽  
Power Scaling ◽  
Optically Pumped ◽  
Ultrashort Pulse Generation
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