2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET

2001 ◽  
Vol 29 (2) ◽  
pp. 117-123 ◽  
Author(s):  
Rashmi ◽  
Subhasis Haldar ◽  
R. S. Gupta
Keyword(s):  
Analytical Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Output Conductance

Temperature dependent analytical model for current–voltage characteristics of AlGaN/GaN power HEMT

2009 ◽  
Vol 53 (3) ◽  
pp. 341-348 ◽  
Author(s):  
M.A. Huque ◽  
S.A. Eliza ◽  
T. Rahman ◽  
H.F. Huq ◽  
S.K. Islam
Keyword(s):  
Analytical Model ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals A Physics-Based Analytical Model for Current–Voltage Characteristics of Perovskite Solar Cells Incorporating Bulk Recombination

Energies ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3868
Author(s):  
M. Zahangir Kabir
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Power Conversion Efficiency ◽  
Analytical Model ◽  
Conversion Efficiency ◽  
Carrier Transport ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Current Voltage ◽  
Current Voltage Characteristics

A physics-based compact analytical model for studying the current–voltage characteristics of perovskite solar cells has been proposed by considering the external voltage-dependent carrier transport, exponential photon absorption, and bulk charge carrier recombination. The explicit analytical expressions for both the forward dark and photocurrents in perovskite solar cells are derived. The current in the external circuit is calculated considering the actual solar spectrum. The mathematical models are verified and useful physical parameters are extracted by comparing the model calculations with the published experimental results on various perovskite solar cells. The proposed model shows excellent agreement with the experimental results. The power conversion efficiency can be improved further by enhancing the carrier transport in the perovskite layer. The improvement in charge carrier transport enhances the fill factor and hence the power conversion efficiency.

scholarly journals Temperature dependent analytical model for submicron GaAs-MESFET

2021 ◽  
Vol 10 (3) ◽  
pp. 1271-1282
Author(s):  
Mohamed Djouder ◽  
Arezki Benfdila ◽  
Ahcene Lakhlef
Keyword(s):  
Analytical Model ◽  
Temperature Dependent ◽  
Gaas Mesfet ◽  
Voltage Variation ◽  
Proposed Model ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Simulation Results ◽  
Parameter Values ◽  
Good Agreement

MESFET are used in circuitsof gigahertz frequencies as they are based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and output transconductance of a 0.3μm gate MESFET with temperature dependence is proposed. The model is validated by comparing the results of the proposed model and those of the numerical simulation. The parameter values are computed using an intrinsic MESFET of two-dimensional geometry. In this work, the distribution of different output loads for varied applied voltages is considered. Simulation results obtainedunder temperature variation effectsfor load distribution and applied driven voltage variation are considered. The RMS and average errors between the different models and GaAs MESFET simulations are calculated to evidence the proposed model accuracy. This was demonstrated by a good agreement between the proposed model and the simulation results, which are found in good agreement. The simulation results obtained under temperature variations were discussed and found to complement those obtained in the literature. This clarifies the relevance of the suggested model analytical.

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