Extraction of rate-equation parameters from optical modal gain measurements for multiple-quantum-well semiconductor lasers

2002 ◽  
Vol 35 (1) ◽  
pp. 55-56 ◽  
Author(s):  
M. S. Wartak ◽  
P. Weetman ◽  
T. Alajoki ◽  
J. Aikio ◽  
V. Heikkinen
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Rate Equation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Modal Gain

Optical modal gain in multiple quantum-well semiconductor lasers based on InP

2006 ◽  
Vol 84 (1) ◽  
pp. 53-66 ◽  
Author(s):  
M S Wartak ◽  
P Weetman ◽  
T Alajoki ◽  
J Aikio ◽  
V Heikkinen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Carrier Transport ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Electrostatic Effects ◽  
Modal Gain

An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor lasers based on InP in terms of the current at electrodes is presented. The link between the current at the electrodes and the density of carriers inside each quantum well was provided by rate equations with the inclusion of carrier transport effects. Description of hole dispersion is based on a 4 × 4 Luttinger–Kohn Hamiltonian and was done with the electrostatic effects of the carrier charges. Electrostatic effects were included via a self-consistent solution of electron and hole wave equations and the Poisson equation. The optical gain for the TE (transverse electric) mode has been determined with the inclusion of non-Markovian effects, Coulombic enhancement, and band-gap renormalization. The theoretical approach was compared with experimental measurements of the optical gain on a laser structure consisting of four quantum wells using the Hakki–Paoli method. The important role played by the leakage current was revealed when the results were compared. PACS No.: 73.63.Hs, 78.20.Bh, 78.20.Ci

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Effect of Leakage Current on Pulse-Width Characteristic in Q-Switched Two-Section AlGaAs Multiple-Quantum-Well Semiconductor Lasers

1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3530-3534
Author(s):  
Mitsuaki Shimizu ◽  
Yoshihiro Suzuki ◽  
Seiji Mukai ◽  
Masanobu Watanabe ◽  
Toshifumi Hasama
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Leakage Current ◽  
Pulse Width ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasers

1989 ◽  
Vol 54 (22) ◽  
pp. 2174-2176 ◽  
Author(s):  
J. Z. Wilcox ◽  
S. Ou ◽  
J. J. Yang ◽  
M. Jansen ◽  
G. L. Peterson
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Emission Wavelength ◽  
Multiple Quantum
Sign in / Sign up

Export Citation Format

Share Document