On the influence of electron-beam parameters on TWT small-signal gain

2002 ◽  
Vol 34 (6) ◽  
pp. 433-434
Author(s):  
Stefano D'Agostino ◽  
Claudio Paoloni
Keyword(s):  
Electron Beam ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Beam Parameters

scholarly journals Small‐signal gain measurements in an electron beam pumped F2laser

1993 ◽  
Vol 63 (4) ◽  
pp. 438-440 ◽  
Author(s):  
H. M. J. Bastiaens ◽  
B. M. C. van Dam ◽  
P. J. M. Peters ◽  
W. J. Witteman
Keyword(s):  
Electron Beam ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

Influence of small oxygen additions on the small-signal-gain dynamics in the active medium of a pulsed electron-beam-controlled discharge CO laser

2008 ◽  
Vol 38 (9) ◽  
pp. 833-839 ◽  
Author(s):  
A A Ionin ◽  
Yu M Klimachev ◽  
A Yu Kozlov ◽  
A A Kotkov ◽  
A K Kurnosov ◽  
...  
Keyword(s):  
Electron Beam ◽  
Active Medium ◽  
Small Signal Gain ◽  
Small Signal ◽  
Co Laser ◽  
Signal Gain ◽  
Pulsed Electron Beam

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

Toward a zero small‐signal gain laser power amplifier

1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain
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