A 10 GHz inductorless active SiGe HBT lowpass filter

2018 ◽  
Vol 28 (9) ◽  
Author(s):  
Francesco Centurelli ◽  
Pietro Monsurrò ◽  
Alessandro Trifiletti
Keyword(s):  
Lowpass Filter ◽  
Sige Hbt

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Invited PaperTemperature dependence of SiGe HBT static and dynamic characteristics

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-81-Pr3-86
Author(s):  
F. Aniel ◽  
N. Zerounian ◽  
A. Gruhle ◽  
C. Mähner ◽  
G. Vernet ◽  
...  
Keyword(s):  
Dynamic Characteristics ◽  
Static And Dynamic Characteristics ◽  
Sige Hbt

A practical approach on non-regular sampling and universal demosaicing of raw image sensor data

2020 ◽  
Vol 2020 (1) ◽  
pp. 91-95
Author(s):  
Philipp Backes ◽  
Jan Fröhlich
Keyword(s):  
Image Quality ◽  
Source Code ◽  
Image Sensor ◽  
Sensor Data ◽  
Color Filter ◽  
Lowpass Filter ◽  
Sampling Errors ◽  
Regular Sampling ◽  
Single Sensor ◽  
Similar Image Quality

Non-regular sampling is a well-known method to avoid aliasing in digital images. However, the vast majority of single sensor cameras use regular organized color filter arrays (CFAs), that require an optical-lowpass filter (OLPF) and sophisticated demosaicing algorithms to suppress sampling errors. In this paper a variety of non-regular sampling patterns are evaluated, and a new universal demosaicing algorithm based on the frequency selective reconstruction is presented. By simulating such sensors it is shown that images acquired with non-regular CFAs and no OLPF can lead to a similar image quality compared to their filtered and regular sampled counterparts. The MATLAB source code and results are available at: http://github. com/PhilippBackes/dFSR

Improved Compact Modeling of SiGe HBT Linearity With MEXTRAM

2021 ◽  
pp. 1-7
Author(s):  
Huaiyuan Zhang ◽  
Guofu Niu ◽  
Marnix B. Willemsen ◽  
Andries J. Scholten
Keyword(s):  
Compact Modeling ◽  
Sige Hbt

Radiation Hardened Millimeter-Wave Receiver Implemented in 90nm, SiGe HBT Technology

2021 ◽  
pp. 1-1
Author(s):  
Ebrahim M. Al Seragi ◽  
Subhra Dash ◽  
K. Muthuseenu ◽  
John D. Cressler ◽  
Hugh J. Barnaby ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Sige Hbt ◽  
Radiation Hardened ◽  
Millimeter Wave Receiver

scholarly journals Sub-THz and THz SiGe HBT Electrical Compact Modeling

Electronics ◽  
2021 ◽  
Vol 10 (12) ◽  
pp. 1397
Author(s):  
Bishwadeep Saha ◽  
Sebastien Fregonese ◽  
Anjan Chakravorty ◽  
Soumya Ranjan Panda ◽  
Thomas Zimmer
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
High Frequency ◽  
State Of The Art ◽  
Sensitivity Study ◽  
Compact Modeling ◽  
Process Technology ◽  
Very High Frequency ◽  
Sige Hbt ◽  
Frequency Behavior

From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process technology from STMicroelectronics. The TCAD simulation platform is appropriately calibrated with the measurements in order to aid the extraction of a few selected high-frequency (HF) parameters of the state-of-the-art compact model HICUM, which are otherwise difficult to extract from traditionally prepared test-structures. Physics-based strategies of extracting the HF parameters are elaborately presented followed by a sensitivity study to see the effects of the variations of HF parameters on certain frequency-dependent characteristics until 500 GHz. Finally, the deployed HICUM model is evaluated against the measured s-parameters of the investigated SiGe HBT until 500 GHz.

Two 320 GHz Signal Sources Based on SiGe HBT Technology

2015 ◽  
Vol 25 (3) ◽  
pp. 178-180 ◽  
Author(s):  
Jongwon Yun ◽  
Daekeun Yoon ◽  
Seungyoon Jung ◽  
Mehmet Kaynak ◽  
Bernd Tillack ◽  
...  
Keyword(s):  
Sige Hbt ◽  
Signal Sources

SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay

2010 ◽  
Author(s):  
B. Heinemann ◽  
R. Barth ◽  
D. Bolze ◽  
J. Drews ◽  
G. G. Fischer ◽  
...  
Keyword(s):  
Gate Delay ◽  
Sige Hbt
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