Luminescent Properties of a Silicone-Carbazolyl Polyfluorene Hybrid Material for Device Applications

2010 ◽  
Vol 296 (1) ◽  
pp. 170-175
Author(s):  
Tatiana D. Martins ◽  
Ines V. P. Yoshida ◽  
Teresa D. Z. Atvars
Keyword(s):  
Hybrid Material ◽  
Luminescent Properties ◽  
Device Applications

Covalent-coordination tandem functionalization of metal-organic framework (UiO-66) as a hybrid probe for luminescence detection of trans, trans-muconic acid as a biomarker of benzene and Fe3+

The Analyst ◽  
2021 ◽  
Author(s):  
Jie Min ◽  
Xiang-Long Qu ◽  
Bing Yan
Keyword(s):  
Hybrid Material ◽  
Metal Organic Framework ◽  
Luminescent Properties ◽  
Muconic Acid ◽  
Luminescence Detection ◽  
Metal Organic ◽  
Organic Framework

By means of post-synthetic treatment on the UiO-66 derivative with -SO3H, a novel luminescent hybrid material named Tb3+@UiO-66-SO3H has been prepared simply and efficiently. Given its wonderful luminescent properties like...

Luminescent properties of Ag(i)/Cu(i) coordination polymers: crystal structures and high intensity luminescence of a PMMA-doped hybrid material based on a quinoline-2,3-dicarboxylic acid ligand

RSC Advances ◽  
2015 ◽  
Vol 5 (22) ◽  
pp. 17343-17353 ◽  
Author(s):  
Yang Song ◽  
Rui-Qing Fan ◽  
Hui-Jie Zhang ◽  
Zhi-Wei Liu ◽  
Xue-Tao Wang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Dicarboxylic Acid ◽  
Crystal Structures ◽  
Coordination Polymers ◽  
Hybrid Material ◽  
High Intensity ◽  
Blue Emission ◽  
Luminescent Properties ◽  
Acid Ligand

Preparation, characterization, crystal structure and different luminescent properties of Ag(i)/Cu(i) coordination polymers: stable blue emission, thermochromism and PMMA-doped hybrid material.

Molecular assembly and luminescent properties of europium polymeric hybrid material based on Si–O–Ti hosts

2015 ◽  
Vol 152 ◽  
pp. 170-172 ◽  
Author(s):  
Yajuan Li ◽  
Xiaoting Ge ◽  
Xuelei Pang ◽  
Xudong Yu ◽  
Xiaoli Zhen ◽  
...  
Keyword(s):  
Hybrid Material ◽  
Luminescent Properties ◽  
Molecular Assembly

scholarly journals Eu3+ Functionalized CQDs Hybrid Material: Synthesis, Luminescent Properties and Sensing Application for the Detection of Cu2+

2021 ◽  
Author(s):  
Ying Li ◽  
Dan Liu ◽  
Ya-Qi Wang ◽  
Fang-fang Wang ◽  
Hanxun Qiu
Keyword(s):  
Hybrid Material ◽  
Copper Ions ◽  
Luminescent Properties ◽  
Luminescence Properties ◽  
Ratiometric Fluorescence ◽  
Material Synthesis ◽  
Fluorescence Nanoprobe ◽  
Sensing Application

In this work, we develop a novel flexible method to construct a lanthanide dual-emitting ratiometric fluorescence nanoprobe with excellent luminescence properties and significantly selectivity for the detection of copper ions,...

Structural and luminescent properties of CaZn2(PO4)2: RE3+ (RE = Er and Pr) nanophosphors for versatile device applications

2020 ◽  
Vol 31 (14) ◽  
pp. 11589-11598
Author(s):  
S. Sarathkumar ◽  
Sk. Munimasthani ◽  
U. S. Udayachandran Thampy ◽  
R. V. S. S. N. Ravikumar
Keyword(s):  
Luminescent Properties ◽  
Device Applications

scholarly journals A Stimuli-Responsive Pillar[5]arene-Based Hybrid Material with Enhanced Tunable Multicolor Luminescence and Ion Sensing Ability

2020 ◽  
Author(s):  
Xin-Yue Lou ◽  
Nan Song ◽  
Ying-Wei Yang
Keyword(s):  
Hybrid Material ◽  
Luminescent Properties ◽  
Building Blocks ◽  
Luminescent Materials ◽  
Stimuli Responsive ◽  
Fluorescent Properties ◽  
Ion Sensing ◽  
Efficient Charge ◽  
Application Potential ◽  
External Stimuli

Abstract Tunable luminescent materials are becoming more and more important owing to their broad application potential in various fields. Here we construct a pillar[5]arene-based hybrid material with stimuli-responsive luminescent properties and ion sensing abilities from a pyridine-modified conjugated pillar[5]arene and a planar chromophore oligo(phenylenevinylene) upon coordination of Cd (II) metal cores. This new material not only shows an optimized luminescence due to the minimized π-π stacking and efficient charge transfer (CT) properties benefitting from the existence of pillar[5]arene rings, but also exhibits tunable multicolor emission induced by different external stimuli including solvent, ions, and acid, indicating great application potential as a fluorescent sensory material especially for Fe3+. With this pillar[5]arene-based dual-ligand hybrid material, valid optimization and regulation on the fluorescence of the original chromophore have been achieved, which demonstrates a plausible strategy for the design of tunable solid-state luminescent materials and also a prototypical model for the effective regulation of fluorescent properties of planar π systems using synthetic macrocycles-based building blocks.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

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