Quenching Phase Separation by Vapor Deposition Polymerization

2015 ◽  
Vol 301 (1) ◽  
pp. 99-109 ◽  
Author(s):  
Ran Tao ◽  
Mitchell Anthamatten
Keyword(s):  
Phase Separation ◽  
Vapor Deposition

Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. L. Piner ◽  
N. A. El-Masry ◽  
S. X. Liu ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

CRYSTALLINE PHASE SEPARATION OF InGaN LAYER MATERIALS PREPARED BY METALORGANIC CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (01n02) ◽  
pp. 268-274
Author(s):  
ZHE CHUAN FENG ◽  
TZUEN RONG YANG ◽  
RONG LIU ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Uniform Distributions ◽  
Metal Organic

Zn -doped InGaN thin films were epitaxied on the top of 1-2 micron thick GaN grown on sapphire by metal organic chemical vapor deposition, and studied by a combination of high resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). HRXRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two or more InGaN bands corresponding to different x(In) for samples with phase separation. PL emissions from InGaN spread over a wider energy ranges and were modulated by the interference effects. Excitation power dependence measurements reveal 2-sets of PL emissions for samples with phase separation, but only 1-set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In -phase separation. These interesting results are correlated to the growth process and microstructural properties.

Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

1999 ◽  
Vol 75 (15) ◽  
pp. 2202-2204 ◽  
Author(s):  
M. K. Behbehani ◽  
E. L. Piner ◽  
S. X. Liu ◽  
N. A. El-Masry ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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