Influence of gas phase composition on the kinetics of chloride melt induced corrosion of pure iron (EU-project OPTICORR)

2006 ◽  
Vol 57 (3) ◽  
pp. 237-243 ◽  
Author(s):  
A. Ruh ◽  
M. Spiegel
Keyword(s):  
Phase Composition ◽  
Gas Phase ◽  
Pure Iron ◽  
Chloride Melt ◽  
Eu Project ◽  
Kinetics Of

Nitrogen Incorporation and Growth Kinetics of GaAsN/GaAs Epilayers Grown by MOVPE

2000 ◽  
Vol 616 ◽  
Author(s):  
Laurent Auvray ◽  
Hervé Dumont ◽  
Jacques Dazord ◽  
Yves Monteil ◽  
Jean Bouix
Keyword(s):  
Activation Energy ◽  
Phase Composition ◽  
Gas Phase ◽  
Competitive Adsorption ◽  
Nonlinear Function ◽  
Group V ◽  
Nitrogen Incorporation ◽  
Nitrogen Desorption ◽  
Kinetics Of ◽  
Growth Temperature Range

AbstractThe nitrogen incorporation behavior in GaAs was investigated in the growth temperature range 500-600°C. It was observed that the temperature-dependence of the nitrogen incorporation exhibits two regimes. At 530°C, the nitrogen content x is a nonlinear function of the gas-phase composition indicating a surface-controlled reaction mechanism. The N composition varies slowly with 500°C < T < 560°C with an activation energy of 0.6 eV. For T < 560°C, N decreases exponentially with Ea= 3.7 eV, interpreted in terms of nitrogen desorption. In light of experimental results, we propose a surface kinetic model based on the competitive adsorption of group V precursors.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

Gas-Phase Anionic Metal Clusters are Model Systems for Surface Oxidation: Kinetics of the Reactions of Mn– with O2 (M = V, Cr, Co, Ni; n = 1–15)

2021 ◽  
Vol 125 (10) ◽  
pp. 2069-2076
Author(s):  
Brendan C. Sweeny ◽  
David C. McDonald ◽  
Nicholas S. Shuman ◽  
Albert A. Viggiano ◽  
Juergen Troe ◽  
...  
Keyword(s):  
Gas Phase ◽  
Oxidation Kinetics ◽  
Metal Clusters ◽  
Surface Oxidation ◽  
Model Systems ◽  
Kinetics Of
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