Identifying the stacking order of multilayer graphene grown by chemical vapor deposition via Raman spectroscopy

2017 ◽  
Vol 49 (1) ◽  
pp. 46-53 ◽  
Author(s):  
Miao-Ling Lin ◽  
Tao Chen ◽  
Wei Lu ◽  
Qing-Hai Tan ◽  
Pei Zhao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Stacking Order

scholarly journals Flexibility of Fluorinated Graphene-Based Materials

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1032 ◽  
Author(s):  
Irina Antonova ◽  
Nadezhda Nebogatikova ◽  
Nabila Zerrouki ◽  
Irina Kurkina ◽  
Artem Ivanov
Keyword(s):  
Chemical Vapor Deposition ◽  
Polyvinyl Alcohol ◽  
Vapor Deposition ◽  
Tensile Strain ◽  
Flexible Substrate ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Current Ratio ◽  
Bending Radius ◽  
Fluorinated Graphene

The resistivity of different films and structures containing fluorinated graphene (FG) flakes and chemical vapor deposition (CVD)-grown graphene of various fluorination degrees under tensile and compressive strains due to bending deformations was studied. Graphene and multilayer graphene films grown by means of the chemical vapor deposition (CVD) method were transferred onto the flexible substrate by laminating and were subjected to fluorination. They demonstrated a weak fluorination degree (F/C lower 20%). Compressive strains led to a strong (one-two orders of magnitude) decrease in the resistivity in both cases, which was most likely connected with the formation of additional conductive paths through fluorinated graphene. Tensile strain up to 3% caused by the bending of both types of CVD-grown FG led to a constant value of the resistivity or to an irreversible increase in the resistivity under repeated strain cycles. FG films created from the suspension of the fluorinated graphene with a fluorination degree of 20–25%, after the exclusion of design details of the used structures, demonstrated a stable resistivity at least up to 2–3% of tensile and compressive strain. The scale of resistance changes ΔR/R0 was found to be in the range of 14–28% with a different sign at the 10% tensile strain (bending radius 1 mm). In the case of the structures with the FG thin film printed on polyvinyl alcohol, a stable bipolar resistive switching was observed up to 6.5% of the tensile strain (bending radius was 2 mm). A further increase in strain (6.5–8%) leads to a decrease in ON/OFF current ratio from 5 down to 2 orders of magnitude. The current ratio decrease is connected with an increase under the tensile strain in distances between conductive agents (graphene islands and traps at the interface with polyvinyl alcohol) and thickness of fluorinated barriers within the active layer. The excellent performance of the crossbar memristor structures under tensile strain shows that the FG films and structures created from suspension are especially promising for flexible electronics.

Insights into graphene wettability transparency by locally probing its surface free energy

Nanoscale ◽  
2019 ◽  
Vol 11 (16) ◽  
pp. 7944-7951 ◽  
Author(s):  
Jin-You Lu ◽  
Tuza Olukan ◽  
Srinivasa Reddy Tamalampudi ◽  
Abdulrahman Al-Hagri ◽  
Chia-Yun Lai ◽  
...  
Keyword(s):  
Free Energy ◽  
Chemical Vapor Deposition ◽  
Surface Energy ◽  
Surface Free Energy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Natural Graphite

In this work, we study the surface energy of monolayer, bilayer and multilayer graphene coatings, produced through exfoliation of natural graphite flakes and chemical vapor deposition.

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

scholarly journals AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport

ACS Nano ◽  
2012 ◽  
Vol 6 (2) ◽  
pp. 1142-1148 ◽  
Author(s):  
Carlos Diaz-Pinto ◽  
Debtanu De ◽  
Viktor G. Hadjiev ◽  
Haibing Peng
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carrier Transport ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Hot Carrier

scholarly journals Single Layer Graphene and Vertical Graphene as a Promising Candidate for Electrochemical Biosensors

2020 ◽  
Vol 71 (5) ◽  
pp. 24-29
Author(s):  
Bianca Tincu ◽  
Mariaora Avram ◽  
Vasilica Tucureanu ◽  
Carmen Mihailaescu ◽  
Oana Tutunaru ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrochemical Method ◽  
Electrochemical Sensors ◽  
High Surface ◽  
Chemical Vapor ◽  
Structure Characterization ◽  
Single Layer Graphene ◽  
Working Electrode

Recently, graphene as a material for sensors has attracted attention due to unique properties, such as: excellent electrical and thermal conductivity, chemical stability, high surface area and Young�s modulus ̴ 1GPa, very promising for electrochemical applications. Electrochemical sensors based on graphene have been used in many applications, such as: biomolecules, gases or metal ions detection. Here, we report the effect of morphology and orientation of graphene as electrode material with electrochemical method. We investigated the capacitive performance in the case of horizontal and vertical graphene sheets, synthetized by thermal chemical vapor deposition (CVD), respectively plasma enhanced chemical vapor deposition (PECVD). Graphene electrode is used in electrochemical cells with three electrodes as a working electrode. Raman spectroscopy was carried on the graphene films for quality and structure characterization. The working electrode was characterized by scanning electron microscopy (SEM), Raman spectroscopy and electrochemical method.

Sign in / Sign up

Export Citation Format

Share Document