Temperature-depending Raman line-shift of silicon carbide

2009 ◽  
Vol 40 (12) ◽  
pp. 1867-1874 ◽  
Author(s):  
Michael Bauer ◽  
Alexander M. Gigler ◽  
Andreas J. Huber ◽  
Rainer Hillenbrand ◽  
Robert W. Stark
Keyword(s):  
Silicon Carbide ◽  
Raman Line ◽  
Line Shift

scholarly journals Radiation Defect-Induced Lattice Contraction of InP

1986 ◽  
Vol 74 ◽  
Author(s):  
C. R. Wie ◽  
T. Jones ◽  
T. A. Tombrello ◽  
T. Vreeland ◽  
F. Xiong ◽  
...  
Keyword(s):  
Raman Line ◽  
Line Width ◽  
Radiation Defect ◽  
Lattice Spacing ◽  
Lattice Strain ◽  
Line Shift ◽  
Lattice Contraction ◽  
Recovery Stage

AbstractWe studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behaviors of lattice strain, Raman line shift, and linewidth. The lattice spacing for the planes parallel to the surface decreases as a result of irradiation, and amounts to a strain of −0.061% for (100) face, −0.056% for (110) face, and −0.050% for (111) face for 15 MeV Cl bombarded samples to a dose of 1.25E15 ions/cm2. The negative lattice strain, Raman line shift, and line width completely recover at 450°C, and show a major recovery stage at 250°C – 350°C.

Evidence for Negative Cross Correlations in Vibrational Dephasing in Liquids: Isotropic Raman-Line Shift and Width Phenomena in Isotopic Mixtures ofN2andO2

2000 ◽  
Vol 85 (18) ◽  
pp. 3850-3853 ◽  
Author(s):  
Dietmar Keutel ◽  
Frank Seifert ◽  
Karl-Ludwig Oehme ◽  
Augustinus Asenbaum ◽  
Maurizio Musso
Keyword(s):  
Raman Line ◽  
Line Shift ◽  
Vibrational Dephasing ◽  
Cross Correlations

Measurement of stress and relaxation in Si1−xGexlayers by Raman line shift and x‐ray diffraction

1993 ◽  
Vol 74 (5) ◽  
pp. 3177-3180 ◽  
Author(s):  
B. Dietrich ◽  
E. Bugiel ◽  
J. Klatt ◽  
G. Lippert ◽  
T. Morgenstern ◽  
...  
Keyword(s):  
Raman Line ◽  
Line Shift ◽  
X Ray Diffraction ◽  
X Ray

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

SIZE DEPENDENT FMR LINE-SHIFT AND LINE-WIDTH STUDIES IN POLYCRYSTALLINE FERRITES AND GARNETS

1977 ◽  
Vol 38 (C1) ◽  
pp. C1-267-C1-269 ◽  
Author(s):  
C. M. SRIVASTAVA ◽  
M. J. PATNI ◽  
N. G. NANADIKAR
Keyword(s):  
Line Width ◽  
Line Shift ◽  
Size Dependent

LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE

1980 ◽  
Vol 41 (C4) ◽  
pp. C4-111-C4-112 ◽  
Author(s):  
V. V. Makarov ◽  
T. Tuomi ◽  
K. Naukkarinen ◽  
M. Luomajärvi ◽  
M. Riihonen
Keyword(s):  
Silicon Carbide ◽  
Ion Implanted

Movement of dislocations and polytypism in silicon carbide

1959 ◽  
Vol 111 (1-6) ◽  
pp. 142-153 ◽  
Author(s):  
V. G. Bhide ◽  
A. R. Verma
Keyword(s):  
Silicon Carbide
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