Raman spectroscopy of Cu doping in Zn1−xCoxO diluted magnetic semiconductor

2009 ◽  
Vol 40 (11) ◽  
pp. 1535-1538 ◽  
Author(s):  
Luc Huy Hoang ◽  
Nguyen Thi Minh Hien ◽  
Nguyen Hoang Hai ◽  
Pham Van Hai ◽  
Nguyen The Khoi ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Cu Doping ◽  
Diluted Magnetic

Raman Spectroscopy of A Novel Diluted Magnetic Semiconductor: Cubic Cd1−xMnxSe.

1989 ◽  
Vol 161 ◽  
Author(s):  
R. G. Alonso ◽  
E.-K. Suh ◽  
H. Pascher ◽  
E. Oh ◽  
A. K. Ramdas ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Zinc Blende ◽  
Spin Flip ◽  
Mode Behavior ◽  
Diluted Magnetic ◽  
Photoluminescence Studies ◽  
Bound Electrons ◽  
Interaction Characteristic

ABSTRACTIn contrast to the bulk diluted magnetic semiconductor (DMS) Cd1−xMnxSe which occurs with the wurtzite structure, its epilayers grown on (001) GaAs substrate by Molecular Beam Epitaxy exhibit the cubic zinc-blende structure. Raman spectroscopy and photoluminescence studies on this novel DMS show (1) a “two-mode” behavior of the zone center optical phonons, (2) the Raman line associated with the spin-flip in the Zeeman split S = 5/2 ground state of Mn2+, and (3) large Raman shifts associated with the spin-flip of donor-bound electrons. The large magnetic field dependence in (3) with saturation at high fields and low temperature shows that the s-d exchange interaction characteristic of DMS's is also manifested strikingly in the zinc-blende phase of Cd1−xMnxSe.

Magnetic studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles

2018 ◽  
Vol 10 (5) ◽  
pp. 05005-1-05005-5
Author(s):  
I. D. Stolyarchuk ◽  
◽  
I. Rogalska ◽  
S. V. Koretskii ◽  
I. Stefaniuk ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Nanoparticles ◽  
Magnetic Studies ◽  
Diluted Magnetic

The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

2015 ◽  
Vol 15 ◽  
pp. S26-S29 ◽  
Author(s):  
Hee Chang Jeon ◽  
Mingkai Li ◽  
Seung Joo Lee ◽  
Gukhyung Ihm ◽  
Tae Won Kang ◽  
...  
Keyword(s):  
Specific Heat ◽  
Quantum Wells ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

scholarly journals Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  
Keyword(s):  
Unit Cell Volume ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Vital Role ◽  
Ferromagnetic Transition ◽  
Chemical Pressure ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

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