Probing the ferroelectric phase transition in sol-gel-derived polycrystalline bismuth ferrite thin films

2008 ◽  
Vol 39 (9) ◽  
pp. 1262-1267 ◽  
Author(s):  
Ashok Kumar ◽  
N. M. Murari ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Bismuth Ferrite ◽  
Sol Gel ◽  
Ferrite Thin Films

Magnetic, ferroelectric and leakage current properties of gadolinium doped bismuth ferrite thin films by sol–gel method

2015 ◽  
Vol 381 ◽  
pp. 127-130 ◽  
Author(s):  
Hone-Zern Chen ◽  
Ming-Cheng Kao ◽  
San-Lin Young ◽  
Jun-Dar Hwang ◽  
Jung-Lung Chiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bismuth Ferrite ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Ferrite Thin Films

Ferroelectric phase transition in Pb0.60Sr0.40TiO3 thin films

2004 ◽  
Vol 87 (2-3) ◽  
pp. 353-356 ◽  
Author(s):  
S.H. Leal ◽  
F.M. Pontes ◽  
E.R. Leite ◽  
E. Longo ◽  
P.S. Pizani ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase

Ferroelectric and Photovoltaic Properties of Mn-Doped Bismuth Ferrite Thin Films

2015 ◽  
Vol 815 ◽  
pp. 135-140 ◽  
Author(s):  
Wei Cai ◽  
Chun Lin Fu ◽  
Rong Li Gao ◽  
Wei Hai Jiang ◽  
Xiao Ling Deng ◽  
...  
Keyword(s):  
Thin Films ◽  
Short Circuit ◽  
Bismuth Ferrite ◽  
Manganese Content ◽  
Sol Gel ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Electric Field Increase ◽  
Ferrite Thin Films ◽  
Mn Doped

Bismuth ferrite is an important material in ferroelectric photovoltaic field, because of its narrow band gap and large polarization. Doping is a common method to further improve the photovoltaic properties of bismuth ferrite. Mn-doped bismuth ferrite thin films were prepared by sol-gel method. The effects of manganese on the crystal structure, ferroelectric and photovoltaic properties have been investigated. The result indicates that Mn-doped bismuth ferrite thin films are single phase and the lattice constant increases with the increase of manganese content. As manganese content increases, the remnant polarization and coercive electric field increase, while the short circuit photocurrent density and power conversion efficiency decrease. The open circuit photovoltage increases first and reaches the maximum and then decreases as manganese content increases. The results indicate that enhanced ferroelectricity caused by addition of manganese doesn’t make improvement on the photovoltaic characteristic.

A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si

Nano Letters ◽  
2017 ◽  
Vol 17 (9) ◽  
pp. 5823-5829 ◽  
Author(s):  
Deyang Chen ◽  
Christopher T. Nelson ◽  
Xiaohong Zhu ◽  
Claudy R. Serrao ◽  
James D. Clarkson ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferroelectric Phase Transition ◽  
Ferroelectric Phase ◽  
Bifeo3 Thin Films ◽  
La Doped
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