A physically based, accurate compact model of direct tunneling gate current considering quantum mechanical effects in nanoscale metal-oxide-semiconductor field-effect transistors

2011 ◽  
Vol 25 (2) ◽  
pp. 130-138
Author(s):  
M. A. Karim ◽  
Q. D. M. Khosru
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Compact Model ◽  
Oxide Semiconductor ◽  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Physically Based ◽  
Quantum Mechanical Effects

Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

2006 ◽  
Vol 45 (4B) ◽  
pp. 3088-3096 ◽  
Author(s):  
Marlène Ferrier ◽  
Raphael Clerc ◽  
Georges Pananakakis ◽  
Gerard Ghibaudo ◽  
Frederic Boeuf ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Compact Model ◽  
Oxide Semiconductor ◽  
Double Gate
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