Physically based 2D compact model for power bipolar devices

2004 ◽  
Vol 17 (4) ◽  
pp. 397-405 ◽  
Author(s):  
P. M. Igic ◽  
M. S. Towers ◽  
P. A. Mawby
Keyword(s):  
Compact Model ◽  
Bipolar Devices ◽  
Physically Based

A 2D physically based compact model for advanced power bipolar devices

2004 ◽  
Vol 35 (7) ◽  
pp. 591-594 ◽  
Author(s):  
P.M. Igic ◽  
M.S. Towers ◽  
P.A. Mawby
Keyword(s):  
Compact Model ◽  
Bipolar Devices ◽  
Physically Based

A compact model for multiterminal bipolar devices used in smart power applications

1998 ◽  
Vol 45 (9) ◽  
pp. 2037-2046 ◽  
Author(s):  
N. Speciale ◽  
A. Leone ◽  
V. Graziano ◽  
G. Privitera
Keyword(s):  
Compact Model ◽  
Smart Power ◽  
Bipolar Devices

A Physically Based Compact Model for IGZO Transistors

2021 ◽  
pp. 1-6
Author(s):  
Rafael Rios ◽  
Daniel Morris ◽  
Toshihiko Takeuchi ◽  
Hiromi Sawai
Keyword(s):  
Compact Model ◽  
Physically Based

Physically Based Compact Model for Segmented a-Si:H n-i-p Photodiodes

2008 ◽  
Vol 1066 ◽  
Author(s):  
Jeff Hsin Chang ◽  
Timothy Tredwell ◽  
Gregory Heiler ◽  
Yuri Vygranenko ◽  
Denis Striakhilev ◽  
...  
Keyword(s):  
Current Source ◽  
Measurement Data ◽  
Parameter Extraction ◽  
Extraction Process ◽  
Compact Model ◽  
Design Environment ◽  
Large Area ◽  
Measurement Results ◽  
Physically Based ◽  
Flat Panel Detectors

ABSTRACTHydrogenated amorphous silicon (a–Si:H) n–i–p photodiodes are used as pixel sensor elements in large-area flat-panel detectors for medical imaging diagnostics. Accurate model of the sensor plays an imperative role in determining the performances of the detector systems as well as ascertaining design issues prior to production. This work presents the formulation of a compact model for segmented a–Si:H n–i–p photodiodes suitable for circuit-level simulation. The underlining equations of the model are based on device physics where the parameters are extracted from pertinent measurement results of previously fabricated a–Si:H n–i–p photodiodes. Furthermore, the implemented model allows photoresponse simulation with the addition of an external current source. Results of the simulation demonstrated excellent matching with measurement data for different photodiode sizes at various temperatures. The model is implemented in Verilog-A and simulated under Cadence Virtuoso design environment using device geometry and extracted parameters as inputs. The model formulation and parameter extraction process, as well as measurements and simulation results are presented.

scholarly journals A Physically-Based Compact Model for LDMOS Transistors

1998 ◽  
pp. 271-274 ◽  
Author(s):  
James Victory ◽  
Colin C. McAndrew ◽  
Rainer Thoma ◽  
Kuntal Joardar ◽  
Margaret Kniffin ◽  
...  
Keyword(s):  
Compact Model ◽  
Physically Based

scholarly journals A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation

2001 ◽  
Vol 36 (1) ◽  
pp. 110-121 ◽  
Author(s):  
M.S.L. Lee ◽  
B.M. Tenbroek ◽  
W. Redman-White ◽  
J. Benson ◽  
M.J. Uren
Keyword(s):  
Analog Circuit ◽  
Circuit Simulation ◽  
Compact Model ◽  
Physically Based ◽  
Analog Circuit Simulation
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