Effects of gate width variation on the performance of Normally‐OFF dual‐recessed gate MIS AlGaN / GaN HEMT

2021 ◽  
Author(s):  
Ravi Ranjan ◽  
Nitesh Kashyap ◽  
Ashish Raman
Keyword(s):  
Gate Width ◽  
Gan Hemt ◽  
Recessed Gate

High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate

2003 ◽  
Vol 200 (1) ◽  
pp. 187-190 ◽  
Author(s):  
Hideyuki Okita ◽  
Katsuaki Kaifu ◽  
Juro Mita ◽  
Tomoyuki Yamada ◽  
Yoshiaki Sano ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt ◽  
High Transconductance ◽  
Recessed Gate

Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate

2021 ◽  
pp. 107064
Author(s):  
Jialin Li ◽  
Yian Yin ◽  
Ni Zeng ◽  
Fengbo Liao ◽  
Mengxiao Lian ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Recessed Gate

scholarly journals Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT

2009 ◽  
Vol 58 (3) ◽  
pp. 1966
Author(s):  
Wang Chong ◽  
Quan Si ◽  
Zhang Jin-Feng ◽  
Hao Yue ◽  
Feng Qian ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Gan Hemt ◽  
Recessed Gate

Recessed gate Pt-AlGaN/GaN HEMT H2 sensor

2019 ◽  
Author(s):  
R. Sokolovskij ◽  
J. Zhang ◽  
H. Zheng ◽  
W. Li ◽  
Y. Jiang ◽  
...  
Keyword(s):  
Gan Hemt ◽  
H2 Sensor ◽  
Recessed Gate

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

2005 ◽  
Vol 41 (7) ◽  
pp. 449 ◽  
Author(s):  
W.B. Lanford ◽  
T. Tanaka ◽  
Y. Otoki ◽  
I. Adesida
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Recessed Gate
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