Impact of negative bias temperature instability on single event transients in scaled logic circuits

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2854 ◽

2021 ◽

Author(s):

Ambika Prasad Shah ◽

Michael Waltl

Keyword(s):

Logic Circuits ◽

Negative Bias ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Single Event Transients

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Negative bias temperature instability induced single event transient pulse narrowing and broadening

Journal of Semiconductors ◽

10.1088/1674-4926/31/12/124004 ◽

2010 ◽

Vol 31 (12) ◽

pp. 124004 ◽

Cited By ~ 1

Author(s):

Jianjun Chen ◽

Shuming Chen ◽

Bin Liang ◽

Biwei Liu

Keyword(s):

Negative Bias ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Single Event Transient ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Pulse Narrowing

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Effect of Negative Bias Temperature Instability on the Single Event Upset Response of 40 nm Flip-Flops

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2012.2224136 ◽

2012 ◽

Vol 59 (6) ◽

pp. 2651-2657 ◽

Cited By ~ 12

Author(s):

A. V. Kauppila ◽

B. L. Bhuva ◽

T. D. Loveless ◽

S. Jagannathan ◽

N. J. Gaspard ◽

...

Keyword(s):

Negative Bias ◽

Single Event Upset ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2012.2231437 ◽

2013 ◽

Vol 60 (4) ◽

pp. 2635-2639 ◽

Cited By ~ 4

Author(s):

I. El Moukhtari ◽

Vincent Pouget ◽

Frederic Darracq ◽

Camille Larue ◽

Philippe Perdu ◽

...

Keyword(s):

Cmos Technology ◽

Negative Bias ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Single Event Transient ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Instability Effect

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Impact of negative bias temperature instability on the single-event upset threshold of a 65nm SRAM cell

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.129 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1325-1328 ◽

Cited By ~ 6

Author(s):

I. El Moukhtari ◽

V. Pouget ◽

C. Larue ◽

F. Darracq ◽

D. Lewis ◽

...

Keyword(s):

Negative Bias ◽

Single Event Upset ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Sram Cell

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Modeling to predict the time evolution of negative bias temperature instability (NBTI) induced single event transient pulse broadening

Science China Technological Sciences ◽

10.1007/s11431-012-4747-3 ◽

2012 ◽

Vol 55 (4) ◽

pp. 1101-1106 ◽

Cited By ~ 1

Author(s):

ShuMing Chen ◽

JianJun Chen ◽

YaQing Chi ◽

FanYu Liu ◽

YiBai He

Keyword(s):

Time Evolution ◽

Negative Bias ◽

Single Event ◽

Negative Bias Temperature Instability ◽

Single Event Transient ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Pulse Broadening

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Cited By ~ 2

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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