Effect of interface dipole on channel engineering and on direct tunneling current in double gate
            MOSFET

Sanjay; B. Prasad; Anil Vohra

doi:10.1002/jnm.2754

Effect of interface dipole on channel engineering and on direct tunneling current in double gate MOSFET

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2754 ◽

2020 ◽

Vol 33 (6) ◽

Author(s):

Sanjay ◽

B. Prasad ◽

Anil Vohra

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Interface Dipole ◽

Direct Tunneling ◽

Double Gate Mosfet ◽

Channel Engineering ◽

Direct Tunneling Current

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Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET

Microelectronics Journal ◽

10.1016/j.mejo.2011.02.008 ◽

2011 ◽

Vol 42 (5) ◽

pp. 688-692 ◽

Cited By ~ 3

Author(s):

S.K. Vishvakarma ◽

V. Komal Kumar ◽

A.K. Saxena ◽

S. Dasgupta

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Metal Gate ◽

Direct Tunneling ◽

Double Gate Mosfet ◽

Direct Tunneling Current

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Analytical modeling of direct tunneling current through gate stacks for the determination of suitable high-kdielectrics for nanoscale double-gate MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/26/4/045002 ◽

2011 ◽

Vol 26 (4) ◽

pp. 045002 ◽

Cited By ~ 16

Author(s):

Ghader Darbandy ◽

Romain Ritzenthaler ◽

François Lime ◽

Ivan Garduño ◽

Magali Estrada ◽

...

Keyword(s):

Analytical Modeling ◽

Tunneling Current ◽

Double Gate ◽

Gate Stacks ◽

Direct Tunneling ◽

Direct Tunneling Current

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Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack

Solid-State Electronics ◽

10.1016/j.sse.2012.05.038 ◽

2012 ◽

Vol 76 ◽

pp. 19-24 ◽

Cited By ~ 1

Author(s):

Ferney Chaves ◽

David Jiménez ◽

Jordi Suñé

Keyword(s):

Tunneling Current ◽

Double Gate ◽

Explicit Model ◽

Direct Tunneling ◽

Direct Tunneling Current

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Study of direct tunneling current oscillations in ultrathin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.1861153 ◽

2005 ◽

Vol 97 (6) ◽

pp. 064107 ◽

Cited By ~ 4

Author(s):

E. P. Nakhmedov ◽

C. Radehaus ◽

K. Wieczorek

Keyword(s):

Gate Dielectrics ◽

Tunneling Current ◽

Direct Tunneling ◽

Current Oscillations ◽

Direct Tunneling Current

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Analysis of Tunneling Current for Bottom Gate Voltage of Sub-10 nm Asymmetric Double Gate MOSFET

The Journal of the Korean Institute of Information and Communication Engineering ◽

10.6109/jkiice.2015.19.1.163 ◽

2015 ◽

Vol 19 (1) ◽

pp. 163-168

Author(s):

Hakkee Jung

Keyword(s):

Gate Voltage ◽

Tunneling Current ◽

Double Gate ◽

Double Gate Mosfet ◽

Bottom Gate

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Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Solid State Communications ◽

10.1016/s0038-1098(02)00719-6 ◽

2003 ◽

Vol 125 (3-4) ◽

pp. 219-223 ◽

Cited By ~ 14

Author(s):

Xiaoyan Liu ◽

Jinfeng Kang ◽

Ruqi Han

Keyword(s):

Current Model ◽

Tunneling Current ◽

Gate Oxide ◽

Quantization Effect ◽

Direct Tunneling ◽

Mos Devices ◽

Depletion Effect ◽

Direct Tunneling Current ◽

Thin Gate Oxide

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Analysis of PD SOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate

ECS Transactions ◽

10.1149/1.2728856 ◽

2019 ◽

Vol 6 (4) ◽

pp. 165-170 ◽

Cited By ~ 2

Author(s):

Georges Guegan ◽

Jeremy Pretet ◽

Romain Gwoziecki ◽

Olivier Gonnard ◽

Gilles Gouget ◽

...

Keyword(s):

Performance Enhancement ◽

Tunneling Current ◽

Device Performance ◽

Direct Tunneling ◽

Direct Tunneling Current

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Numerical Simulation for Direct Tunneling Current in Poly-Si-Gate MOS Capacitors

Journal of Computational Electronics ◽

10.1007/s10825-004-7092-3 ◽

2004 ◽

Vol 3 (3-4) ◽

pp. 439-442 ◽

Cited By ~ 1

Author(s):

M. Okamoto ◽

N. Mori

Keyword(s):

Numerical Simulation ◽

Tunneling Current ◽

Mos Capacitors ◽

Direct Tunneling ◽

Direct Tunneling Current

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Characterization of oxide charge trapping in ultrathin N2O oxide using direct tunneling current

Solid-State Electronics ◽

10.1016/j.sse.2005.11.005 ◽

2006 ◽

Vol 50 (2) ◽

pp. 170-176 ◽

Cited By ~ 1

Author(s):

H. Wong ◽

C.K. Wong ◽

Y. Fu ◽

J.J. Liou

Keyword(s):

Tunneling Current ◽

Charge Trapping ◽

Oxide Charge ◽

Direct Tunneling ◽

Direct Tunneling Current

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New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n+ poly gate

Solid-State Electronics ◽

10.1016/j.sse.2009.02.011 ◽

2009 ◽

Vol 53 (7) ◽

pp. 741-745

Author(s):

Georges Guegan ◽

R. Gwoziecki ◽

P. Touret ◽

C. Raynaud ◽

J. Pretet ◽

...

Keyword(s):

Tunneling Current ◽

Floating Body ◽

Body Effect ◽

Direct Tunneling ◽

Floating Body Effect ◽

Direct Tunneling Current

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