A millimeter‐wave scalable small signal model of RF CMOS transistor against number of fingers

2019 ◽  
Vol 33 (3) ◽  
Author(s):  
Muhammad Adil Bashir ◽  
Yunqiu Wu ◽  
Jun Liu ◽  
Chenxi Zhao ◽  
Hongyan Tang ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Small Signal ◽  
Rf Cmos ◽  
Signal Model ◽  
Small Signal Model ◽  
Cmos Transistor

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 243-251 ◽  
Author(s):  
Tom K. Johansen ◽  
Matthias Rudolph ◽  
Thomas Jensen ◽  
Tomas Kraemer ◽  
Nils Weimann ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Parameter Extraction ◽  
Small Signal ◽  
Current Crowding ◽  
Signal Modeling ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Starting Point ◽  
Equivalent Circuit Parameters

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

scholarly journals Study of Small-signal Model of Simple CMOS Amplifier with Instability Compensation of Positive Feedback Loop

2015 ◽  
Vol 15 (3) ◽  
pp. 139-151 ◽  
Author(s):  
R. Sotner ◽  
J. Jerabek ◽  
N. Herencsar ◽  
K. Vrba ◽  
A. Lahiri ◽  
...  
Keyword(s):  
Small Signal ◽  
Mos Transistors ◽  
Signal Model ◽  
Small Signal Model ◽  
Precise Analysis ◽  
Passive Network ◽  
Cmos Transistor ◽  
Voltage Follower ◽  
Cmos Amplifier ◽  
Theoretical Analyses

AbstractThe paper deals with precise analysis of simple AC variable gain CMOS amplifier. The circuit can be used as a simple voltage follower (6 MOS transistors are required) or amplifier. The main attention of this work is focused on a small-signal model of the proposed block and effects of additional passive network leading to compensation of its instability. The continuous gain adjusting in range from 1.1 to 10 (0.8 – 20 dB and with bandwidth 4.9 - 90 MHz at 5 pF load capacitance) is possible and the proposed amplifier is suitable for implementation in systems, where lower range of gain adjusting and large dynamical range is required. Theoretical analyses are supported by PSpice simulations (TSMC 0.18 um technological models) and experimental measurements with commercially available CMOS transistor fields (ALD1106/7) also confirm the discussed behavior of the amplifier.

scholarly journals A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

2021 ◽  
Vol 11 (19) ◽  
pp. 9120
Author(s):  
Jihoon Kim
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
High Electron ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model ◽  
Gan Hemts ◽  
Amplifier Design

A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

scholarly journals MOSFET Small-Signal Model Considering Hot-Carrier Effect for Millimeter-Wave Frequencies

2019 ◽  
Vol 40 (4) ◽  
pp. 419-428 ◽  
Author(s):  
Chenyang Li ◽  
Boon Chirn Chye ◽  
Yongkui Yang ◽  
Enyi Yao ◽  
Minoru Fujishima
Keyword(s):  
Millimeter Wave ◽  
Small Signal ◽  
Signal Model ◽  
Hot Carrier ◽  
Carrier Effect ◽  
Small Signal Model ◽  
Hot Carrier Effect
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