A pertinent approximation of the electrostatic potential in a quantized electron accumulation layer induced at a nonideal surface of a narrow-gap semiconductor

2017 ◽  
Vol 31 (1) ◽  
pp. e2260
Author(s):  
Boris G. Vainer
Keyword(s):  
Electrostatic Potential ◽  
Narrow Gap ◽  
Accumulation Layer ◽  
Electron Accumulation

Electron accumulation layer at the Cs-covered GaN(0001) n-type surface

2004 ◽  
Vol 85 (8) ◽  
pp. 1365-1367 ◽  
Author(s):  
G. V. Benemanskaya ◽  
V. S. Vikhnin ◽  
N. M. Shmidt ◽  
G. E. Frank-Kamenetskaya ◽  
I. V. Afanasiev
Keyword(s):  
Accumulation Layer ◽  
Electron Accumulation

scholarly journals Electron accumulation layer in ultrastrong magnetic field

2017 ◽  
Vol 43 (2) ◽  
pp. 232-238
Author(s):  
M. Sammon ◽  
Han Fu ◽  
B. I. Shklovskii
Keyword(s):  
Magnetic Field ◽  
Accumulation Layer ◽  
Electron Accumulation

Electron accumulation layer on clean In-terminated InAs(0 0 1)(4×2)-c(8×2) surface

2001 ◽  
Vol 482-485 ◽  
pp. 587-592 ◽  
Author(s):  
P. De Padova ◽  
C. Quaresima ◽  
P. Perfetti ◽  
R. Larciprete ◽  
R. Brochier ◽  
...  
Keyword(s):  
Accumulation Layer ◽  
Electron Accumulation

Examining the Anomalous Electrical Characteristics Observed in InN Nanowires

2008 ◽  
Vol 8 (1) ◽  
pp. 222-227 ◽  
Author(s):  
Anurag Chaudhry ◽  
M. Saif Islam
Keyword(s):  
Large Diameter ◽  
Small Diameter ◽  
Photonic Devices ◽  
High Density ◽  
Conduction Path ◽  
Accumulation Layer ◽  
Electron Accumulation ◽  
Unique Material ◽  
Measured Resistance ◽  
Surface Conduction

Research interest in InN has intensified in recent years because of its unique material properties and promising applications in electronic and photonic devices. Measurements on InN nanowires presented by Chang et al., [J. Electron. Mater. 35, 738 (2006)] showed an anomalous resistance behavior in InN nanowires with diameters less than 90 nm. We examine possible theories presented in literature to explain this intriguing observation. We propose that the presence of a high density electron accumulation layer at the surface of thin InN nanowires is the most probable cause for the uncharacteristic relationship between the total measured resistance and the ratio of length-to-area. High density surface electron accumulation layer, characteristic of InN films and nanowire, promotes a surface conduction path distinct from the bulk conduction. For large diameter nanowires, bulk conduction is likely to be the dominant mechanism while surface conduction is proposed to play a major role for small diameter InN nanowires.

InN Nanowires: Energy Harvesting from the Obliquely Aligned InN Nanowire Array with a Surface Electron-Accumulation Layer (Adv. Mater. 6/2013)

2013 ◽  
Vol 25 (6) ◽  
pp. 936-936
Author(s):  
Nai-Jen Ku ◽  
Chao-Hung Wang ◽  
Jun-Han Huang ◽  
Hsin-Chiao Fang ◽  
Po-Chien Huang ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Nanowire Array ◽  
Surface Electron ◽  
Accumulation Layer ◽  
Electron Accumulation

Energy Harvesting from the Obliquely Aligned InN Nanowire Array with a Surface Electron-Accumulation Layer

2012 ◽  
Vol 25 (6) ◽  
pp. 861-866 ◽  
Author(s):  
Nai-Jen Ku ◽  
Chao-Hung Wang ◽  
Jun-Han Huang ◽  
Hsin-Chiao Fang ◽  
Po-Chien Huang ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Nanowire Array ◽  
Surface Electron ◽  
Accumulation Layer ◽  
Electron Accumulation

Electron accumulation layer atn‐Si/non‐liquid electrolyte interfaces

1987 ◽  
Vol 51 (14) ◽  
pp. 1121-1123 ◽  
Author(s):  
H. Benisty ◽  
Ph. Colomban ◽  
J.‐N. Chazalviel
Keyword(s):  
Liquid Electrolyte ◽  
Accumulation Layer ◽  
Electron Accumulation

scholarly journals On the origin of the electron accumulation layer at clean InAs(111) surfaces

2021 ◽  
Vol 23 (8) ◽  
pp. 4811-4817
Author(s):  
Ivan I. Vrubel ◽  
Dmitry Yudin ◽  
Anastasiia A. Pervishko
Keyword(s):  
Electronic Properties ◽  
Accumulation Layer ◽  
Electron Accumulation ◽  
Stm Images

We address the electronic properties of bulk InAs and clean InAs(111) surfaces using DFT+U method. On the basis of optimized atomic surfaces we recover STM images and propose a possible explanation for the electron accumulation layer generation.

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