scholarly journals Evolution of electron states at a narrow-gap semiconductor surface in an accumulation-layer formation process

2002 ◽  
Vol 66 (20) ◽  
Author(s):  
Shuma Abe ◽  
Takeshi Inaoka ◽  
Masayuki Hasegawa
Keyword(s):  
Formation Process ◽  
Semiconductor Surface ◽  
Narrow Gap ◽  
Layer Formation ◽  
Electron States ◽  
Accumulation Layer

scholarly journals NUMERICAL ANALYSIS OF DEVELOPING TURBULENT FLOW IN A CLOSED COMPOUND CHANNEL

2011 ◽  
Vol 10 (1-2) ◽  
pp. 81
Author(s):  
S. I. S. Souza ◽  
J. N. V. Goulart
Keyword(s):  
Mixing Layer ◽  
Flow Instabilities ◽  
Navier Stokes ◽  
Compound Channel ◽  
Narrow Gap ◽  
Layer Formation ◽  
Velocity Difference ◽  
Large Structures ◽  
Ansys Cfx ◽  
Reynolds Average

The study of turbulence characteristics in compound channels is still focus of attention. A lot of experimental results have been produced. Main results have revealed a mixing layer formation between main subchannel and the gap region, implying the flow might be ruled by local scales. The outcomes have pointed to the instabilities of mixing layer are responsible for large structures formation between main channel and narrow gap. Furthermore, the periodical behavior of these structures seems to be ruled by mean mixing layer characteristics, as velocity difference, velocity of convection and mixing layer thickness. By using ANSYS-CFX-12, with unsteady Reynolds Average Navier-Stokes and as turbulence model Spalart-Allmaras (SA), a compound channel was studied. Numerical results predicted velocity profile with high vorticity peaks and flow instabilities starting at L/Dh = 15.

Atomic-level understanding layer-by-layer formation process of TiCx on carbon film

2021 ◽  
Vol 367 ◽  
pp. 137514
Author(s):  
Jingchun Liu ◽  
Weiyan Jiang ◽  
Junxia Liu ◽  
Dewu Long ◽  
Jianqiang Wang
Keyword(s):  
Formation Process ◽  
Carbon Film ◽  
Atomic Level ◽  
Layer By Layer ◽  
Layer Formation

On the Structural Diversity of Sialoliths

2007 ◽  
Vol 13 (5) ◽  
pp. 390-396 ◽  
Author(s):  
António P. Alves de Matos ◽  
Patrícia A. Carvalho ◽  
Arlindo Almeida ◽  
Luís Duarte ◽  
Rui Vilar ◽  
...  
Keyword(s):  
Formation Process ◽  
Structural Diversity ◽  
Growth Stages ◽  
Layer Formation ◽  
Organic Layers ◽  
The Core ◽  
Significant Variability ◽  
Multiple Cores ◽  
Laminated Structures

Sialoliths from parotid and submaxillar glands have been characterized. Fractured and polished surfaces revealed an intrinsic structural diversity across the calculi sections. In general, the calculi presented highly mineralized amorphous-looking cores surrounded by concentric alternating mineralized and organic layers. The thickness of these layers decreased from the outer regions toward the center of the sialolith, illustrating a sequence of growth stages. Nevertheless, a significant variability could be detected among the specimens. In some cases, the calculi displayed multiple cores and lacked concentric laminated structures. In other instances, the specimens exhibited extensive regions of globular structures. In these cases, the globule diameter decreased across the radius toward the center of the sialoliths, and the globular structures tended to reorganize, forming bright and dark laminated layers surrounding the core. The participation of globular structures in the layer formation process points to morphogenetic mechanisms not previously described.

Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface

1999 ◽  
Vol 60 (11) ◽  
pp. 7752-7755 ◽  
Author(s):  
V. Yu. Aristov ◽  
G. Le Lay ◽  
V. M. Zhilin ◽  
G. Indlekofer ◽  
C. Grupp ◽  
...  
Keyword(s):  
Quantum State ◽  
Direct Measurement ◽  
Semiconductor Surface ◽  
Accumulation Layer
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