Numerical analysis of direct current circuits containing bipolar and metal oxide semiconductor transistors

2014 ◽  
Vol 27 (5-6) ◽  
pp. 935-948
Author(s):  
M. Tadeusiewicz ◽  
S. Hałgas
Keyword(s):  
Numerical Analysis ◽  
Metal Oxide ◽  
Direct Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Direct Current Circuits

scholarly journals Design and implementation of dspic33fj32mc204 microcontroller–based asynchronous motor voltage/frequency speed control circuit for the ventilation systems of vehicles

2019 ◽  
Vol 52 (7-8) ◽  
pp. 1039-1047 ◽  
Author(s):  
Sinan Kıvrak ◽  
Tolga Özer ◽  
Yüksel Oğuz
Keyword(s):  
Metal Oxide ◽  
Induction Motor ◽  
Direct Current ◽  
Field Effect ◽  
Asynchronous Motor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Variable Frequency ◽  
Voltage Frequency ◽  
Ventilation Systems

Direct current motors are used for blower fans as well as for many other systems in vehicles. In this study, it was suggested to use an asynchronous motor instead of the direct current motor for the blower fan. Therefore, an induction motor driver was designed. The purpose of designing this driver was to allow the use of asynchronous motors instead of the brushed direct current motors utilized in automotive ventilation systems. Power and control circuits were designed. A three-phase variable frequency voltage was obtained using an inverter circuit designed with metal-oxide-semiconductor field-effect transistor semiconductor elements from the direct voltage. The voltage/frequency control method was applied to the induction motor. The power circuit was designed using three npn-type and three pnp-type metal-oxide-semiconductor field-effect transistors, in order to reduce the number of independent sources. The direct current motors generally used in automotive ventilation systems have 12 V operating voltage, so the driver was designed to be used in the 12–18 V range. In this study, the alternating current driver was used for a 90 W asynchronous motor and drive at 12 V and 18 V variable input voltage values. The dsPIC33fj32mc204 microcontroller was used to achieve variable frequency and speed control.

Direct current energy generators from a conducting polymer–inorganic oxide junction

2017 ◽  
Vol 5 (18) ◽  
pp. 8267-8273 ◽  
Author(s):  
Hao Shao ◽  
Jian Fang ◽  
Hongxia Wang ◽  
Hua Zhou ◽  
Tong Lin
Keyword(s):  
Metal Oxide ◽  
Conducting Polymer ◽  
Direct Current ◽  
Ohmic Contact ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Inorganic Oxide ◽  
Current Energy

A non-ohmic contact between a conducting polymer and a metal oxide semiconductor can form a DC energy generator which generates stable DC outputs under compressive impacts.

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

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