Characterization of microscope objective lenses from 1,400 to 1,650 nm to evaluate performance for long‐wavelength nonlinear microscopy applications

2008 ◽  
Vol 71 (7) ◽  
pp. 517-520 ◽  
Author(s):  
Stefanie Renaud Keatings ◽  
Wei Zhang ◽  
Gail McConnell
Keyword(s):  
Nonlinear Microscopy ◽  
Long Wavelength ◽  
Microscope Objective

Electrochemically Synthesis and Characterization of Copolymers Based on 1, 4-Diethoxybenzene and 3, 4-Ethylenedioxythiophene

2011 ◽  
Vol 335-336 ◽  
pp. 989-993
Author(s):  
Mi Ouyang ◽  
Zhen Wei Yu ◽  
Yi Xu ◽  
Yu Jian Zhang ◽  
Cheng Zhang
Keyword(s):  
Cyclic Voltammetry ◽  
Ir Spectroscopy ◽  
Feed Ratio ◽  
Synthesis And Characterization ◽  
Monomer Mixture ◽  
Long Wavelength ◽  
H Nmr ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

Copolymers based on 1, 4-diethoxybenzene (DEB) and 3, 4-ethylenedioxythiophene (EDOT) were electrochemically synthesized and characterized. The structures of the copolymers were established by 1H NMR and FT-IR spectroscopy. The results indicated the final product was a copolymer instead of a blend or a composite. The physical properties were systematically investigated by cyclic voltammetry, UV-vis absorption and fluorescence. The PL maximum of copolymers presented obviously red-shift to long wavelength as the feed ratio of EDOT in monomer mixture increased.

Synthesis and Characterization of Europium Complex Nanoparticles with Long-Wavelength Sensitized Luminescence

2010 ◽  
Vol 26 (07) ◽  
pp. 2031-2036 ◽  
Author(s):  
SHAO Guang-Sheng ◽  
◽  
◽  
XUE Fu-Min ◽  
HAN Rong-Cheng ◽  
...  
Keyword(s):  
Europium Complex ◽  
Synthesis And Characterization ◽  
Long Wavelength ◽  
Sensitized Luminescence

A Long-Wavelength Infrared Photoluminescence Spectrometer for the Characterization of Semiconductor Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel
Keyword(s):  
Infrared Detector ◽  
Optical Emission ◽  
High Sensitivity ◽  
Radiation Emission ◽  
Long Wavelength ◽  
Ion Laser ◽  
Detector Materials ◽  
Long Wavelength Infrared ◽  
Argon Ion

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.

Characterization of THz wave generated from air plasma induced by two-color laser with long wavelength

2017 ◽  
Author(s):  
LiangLiang Zhang ◽  
Shijing Zhang ◽  
Yuejin Zhao ◽  
Hang Zhao ◽  
Tong Wu ◽  
...  
Keyword(s):  
Air Plasma ◽  
Long Wavelength ◽  
Thz Wave

Mbe Growth and Characterization of Hgcdte Heterostructures

1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake
Keyword(s):  
High Performance ◽  
Misfit Dislocations ◽  
Mbe Growth ◽  
Long Wavelength ◽  
Fine Control ◽  
Critical Materials ◽  
Long Wavelength Infrared ◽  
Growth Technology ◽  
Very High

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.

Infrared photoluminescence characterization of long-wavelength HgCdTe detector materials

1993 ◽  
Vol 8 (6S) ◽  
pp. 941-945 ◽  
Author(s):  
S R Kurtz ◽  
J Bajaj ◽  
D D Edwall ◽  
S J C Irvine
Keyword(s):  
Long Wavelength ◽  
Detector Materials ◽  
Hgcdte Detector
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