Laser‐induced cavitation in plasmonic nanoparticle solutions: A comparative study between gold and titanium nitride

Author(s):  
Ariana Nushin Sabzeghabae ◽  
Carla Berrospe‐Rodriguez ◽  
Lorenzo Mangolini ◽  
Guillermo Aguilar
Wear ◽  
2019 ◽  
Vol 422-423 ◽  
pp. 68-80 ◽  
Author(s):  
Magdalena Łępicka ◽  
Małgorzata Grądzka-Dahlke ◽  
Daniel Pieniak ◽  
Kamil Pasierbiewicz ◽  
Kamila Kryńska ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Eungkyu Lee ◽  
Tengfei Luo

Abstract A pulling motion of supercavitating plasmonic nanoparticle (NP) by a single plane wave has received attention for the fundamental physics and potential applications in various fields (e.g., bio-applications, nanofabrication, and nanorobotics). Here, the supercavitating NP depicts a state where a nanobubble encapsulates the NP, which can be formed via the photo-thermal heating process in a liquid. In this letter, we theoretically study the optical force on a supercavitating titanium nitride (TiN) NP by a single plane wave at near-infrared wavelengths to explore optical conditions that can potentially initiate the backward motion of the NP against the wave-propagating direction. An analysis with vector spherical harmonics is used to quantify the optical force on the NP efficiently. Next, the vector field line of the optical force is introduced to visualize the light-driven motion of the NP in a nanobubble. Finally, we characterize the vector field lines at various optical conditions (e.g., various sizes of NP and nanobubble, and wavelength), and we find a suitable window of the optical state which can potentially activate the backward motion of the supercavitating TiN NP.


Author(s):  
Kuraganti Vasu ◽  
Mangalampalli Sri Rama Narasimha Kiran ◽  
Mamidipudi Ghanashyam Krishna ◽  
Kuppuswamy Anantha Padmanabhan

1995 ◽  
Vol 391 ◽  
Author(s):  
Ki-Chul Park ◽  
Ki-Bum Kim

AbstractThe diffusion barrier properties of 100-nm-thick TiN films, both as-deposited and "stuffed", were investigated in both Al/TiN/Si and Cu/TiN/Si metallization systems. In Al/TiN/Si systems, the TiN barrier fails by the formation of both Al spikes and Si pits in the Si substrate. However, in Cu/TiN/Si systems, the failure of TiN diffusion barriers occurs by the predominant diffusion of Cu into the Si substrate, which forms dislocations along the projection of Si {111} plane and precipitates (presumably Cu-silicides) around the dislocation. In Al/TiN/Si systems, it is shown that the diffusion barrier property of TiN is significantly enhanced by "stuffing" in N2 ambient prior to Al deposition. However, in Cu/TiN/Si systems, it is found that the "stuffing" of TiN does not improve the diffusion barrier property as it does in Al/TiN/Si systems.


2020 ◽  
Vol MA2020-02 (23) ◽  
pp. 1668-1668
Author(s):  
Daniel Alvarez ◽  
Keisuke Andachi ◽  
Gaku Tsuchibuchi ◽  
Katsumasa Suzuki ◽  
Jeffrey Spiegelman ◽  
...  

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