A localization method for extraction of foreign matter in the myometrium

Author(s):  
Ling Han ◽  
Gang Shi ◽  
Jiaying Ruan
Author(s):  
J.N. Ramsey ◽  
D.P. Cameron ◽  
F.W. Schneider

As computer components become smaller the analytical methods used to examine them and the material handling techniques must become more sensitive, and more sophisticated. We have used microbulldozing and microchiseling in conjunction with scanning electron microscopy, replica electron microscopy, and microprobe analysis for studying actual and potential problems with developmental and pilot line devices. Foreign matter, corrosion, etc, in specific locations are mechanically loosened from their substrates and removed by “extraction replication,” and examined in the appropriate instrument. The mechanical loosening is done in a controlled manner by using a microhardness tester—we use the attachment designed for our Reichert metallograph. The working tool is a pyramid shaped diamond (a Knoop indenter) which can be pushed into the specimen with a controlled pressure and in a specific location.


2014 ◽  
Author(s):  
Susan Carrigan ◽  
Evan Palmer ◽  
Philip J. Kellman
Keyword(s):  

Author(s):  
Lusmarina Rodrigues Silva ◽  
Aline Marques Monte ◽  
Rafael Gomes Abreu Bacelar ◽  
Guilherme Antonio Silva Ribeiro ◽  
Aline Maria Dourado Rodrigues ◽  
...  

Objective: to analyze physicochemical, microbiological and dirt parameters in marketed honeys, consumed by the elderly cared for at Integrated Health Center in Teresina, Piauí, Brazil. Method: the following analyses were performed: color, water activity, humidity, ash, pH, acidity, reducing sugars, total sugars, apparent sucrose and insoluble solids. Contamination indicator bacteria, mesophilic microorganisms, filamentous fungi and yeasts, as well as dirt and foreign matter, performed in the period from April to June 2016. Results: analyses of ash, pH, acidity and insoluble solids were outside current standards. Microbiological analyses did not present significant contamination. Also, analyses of dirt showed insect fragments, foreign matter in almost all the samples. Conclusion: parameters of ash, pH, acidity and insoluble solids, as well as dirt and foreign matter, indicated that the samples were not in accordance with current legislation. 


Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.


Author(s):  
R. Rosenkranz ◽  
W. Werner

Abstract In many cases of failure localization, passive voltage contrast (PVC) localization method does not work, because it is not possible to charge up conducting structures which supposed to be dark in the SEM and FIB images. The reason for this is leakage currents. In this article, the authors show how they succeeded in overcoming these difficulties by the application of the active voltage contrast (AVC) method as it was described as biased voltage contrast by Campbell and Soden. They identified three main cases where the PVC didn't work but where they succeeded in failure localization with the AVC method. This is illustrated with the use of two case studies. Compared to the optical beam based methods the resolution is much better so a single failing contact of e.g. 70 nm technology can clearly be identified which cannot be done by TIVA or OBIRCH.


2012 ◽  
Vol 38 (7) ◽  
pp. 1190 ◽  
Author(s):  
Yu PENG ◽  
Qing-Hua LUO ◽  
Dan WANG ◽  
Xi-Yuan PENG

ROBOT ◽  
2010 ◽  
Vol 32 (4) ◽  
pp. 553-559
Author(s):  
Huimin LU ◽  
Hui ZHANG ◽  
Shaowu YANG ◽  
Zhiqiang ZHENG

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