scholarly journals A numerical investigation on the high‐frequency geometry of spherical random eigenfunctions

2019 ◽  
Vol 2 (3-4) ◽  
pp. 184-201
Author(s):  
Yabebal Fantaye ◽  
Valentina Cammarota ◽  
Domenico Marinucci ◽  
Anna Paola Todino
Keyword(s):  
Numerical Investigation ◽  
High Frequency

scholarly journals Experimental and numerical investigation into rapid cooling of rock salt related to high frequency cycling of storage caverns

2018 ◽  
Vol 102 ◽  
pp. 120-130 ◽  
Author(s):  
Laura Blanco-Martín ◽  
Ahmed Rouabhi ◽  
Joël Billiotte ◽  
Faouzi Hadj-Hassen ◽  
Bruno Tessier ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
Rock Salt ◽  
High Frequency ◽  
Rapid Cooling

Numerical investigation of high-frequency pulsating electrohydrodynamic jet at low electric Bond numbers

2022 ◽  
Vol 34 (1) ◽  
pp. 012001
Author(s):  
Yin Guan ◽  
Shuang Wu ◽  
Mengduo Wang ◽  
Yu Tian ◽  
Chuanpeng Yu ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
High Frequency

Numerical Investigation of High Frequency Wave-Leak Interaction in Water-Filled Pipes

2021 ◽  
Vol 147 (1) ◽  
pp. 04020091
Author(s):  
Zhounian Lai ◽  
Moez Louati ◽  
Saber Nasraoui ◽  
Mohamed Ghidaoui
Keyword(s):  
Numerical Investigation ◽  
High Frequency ◽  
Frequency Wave ◽  
High Frequency Wave

NUMERICAL INVESTIGATION OF THE EFFECT OF DOPING PROFILES ON THE HIGH FREQUENCY PERFORMANCE OF InP/InGaAs SUPER SCALED HBTs

2004 ◽  
Vol 14 (03) ◽  
pp. 632-639
Author(s):  
DMITRY VEKSLER ◽  
MICHAEL S. SHUR ◽  
V. E. HOUTSMA ◽  
N. G. WEIMANN ◽  
Y. K. CHEN
Keyword(s):  
Numerical Investigation ◽  
High Frequency ◽  
Doping Concentration ◽  
Series Resistance ◽  
Lateral Diffusion ◽  
Hot Electrons ◽  
Doping Profile ◽  
Doping Profiles ◽  
Push Out ◽  
High Frequency Performance

Our simulations show that the emitter and collector doping profile engineering is very important for the transistor optimization, in particular, adjusting the low doped emitter section to the depletion length resulted in the decrease of the emitter series resistance and increased ft and fmax; decreasing of the collector doping concentration and shrinking the collector thickness reduced the collector transit time. Accounting for the lateral diffusion of hot electrons in the device with submicron emitter was found to be important in the transistor optimization process. This effect determines the effective thickness of the emitter finger and the value of the push-out current.

A QUANTITATIVE STUDY OF THE LIMITING POLARIZATION OF HIGH-FREQUENCY RADIO WAVES

1963 ◽  
Vol 41 (10) ◽  
pp. 1614-1622
Author(s):  
C. Abhirama Reddy
Keyword(s):  
Numerical Investigation ◽  
Electron Density ◽  
Quantitative Study ◽  
High Frequency ◽  
Hartree Equation ◽  
Radio Waves

A detailed numerical investigation of the characteristics of the "limiting region" in the ionosphere is carried out, using both Booker's criterion (1936) and Budden's equation (1952) for determining the "limiting region". The results show that, in the case of vertically downcoming high-frequency radio waves, the "limiting region" always occurs at levels of very low electron density for all conditions of normal layer propagation, thus justifying the method of computing the limiting polarization (from the Appleton–Hartree equation) with N = 0.The possibility that irregular ionization patches in the lowermost ionosphere might give rise to multiple "limiting levels" and thus affect the limiting polarization of downcoming radio waves is investigated; it is shown that such an effect, though theoretically possible, is not likely to occur frequently.

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