scholarly journals Angular Dependence of Solar Cell Parameters in Crystalline Silicon Solar Cells Textured with Periodic Array of Microholes

2020 ◽  
Vol 4 (9) ◽  
pp. 1900105
Author(s):  
Serra Altinoluk ◽  
Naveen Kumar ◽  
Emine Hande Ciftpinar ◽  
O. Demircioglu ◽  
Rasit Turan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Angular Dependence ◽  
Crystalline Silicon ◽  
Periodic Array ◽  
Silicon Solar Cells ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells

Electronically Stimulated Degradation of Crystalline Silicon Solar Cells

2005 ◽  
Vol 864 ◽  
Author(s):  
J. Schmidt ◽  
K. Bothe ◽  
D. Macdonald ◽  
J. Adey ◽  
R. Jones ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Formation ◽  
Crystalline Silicon ◽  
Short Review ◽  
Current Status ◽  
Silicon Solar Cells ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Characteristic Features ◽  
Oxygen Complexes

AbstractCarrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

The Business of Fast ALD Equipment for Depositing Alumina Passivation Layers on Crystalline Silicon Solar Cells.

2011 ◽  
Vol 1353 ◽  
Author(s):  
Ad Vermeer ◽  
Roger Gortzen ◽  
P. Poodt ◽  
F. Roozeboom
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Throughput ◽  
Crystalline Silicon ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Alumina Layer ◽  
Solar Cell Efficiency ◽  
Crystalline Silicon Solar Cells ◽  
Cell Efficiency

ABSTRACTAtomic Layer Deposition (ALD) is a gas phase deposition technique for depositing very high quality thin films with an unsurpassed conformality. The main drawback of ALD however is the very low deposition rate (~ 1 nm/min). Recently, record deposition rates for alumina of up to 1 nm/s were reached using spatial ALD, while maintaining the typical assets regarding film quality as obtained by conventional, slow ALD [1]. This allows for ALD at high throughput numbers.One interesting application is passivation of crystalline silicon solar cells. Applying a thin alumina layer is reported to increase solar cell efficiency and enables the use of thinner wafers, thus reducing the main cost factor [2]. In this paper we report on the latest progress made by SoLayTec that delivered a working prototype of a system realizing full area single sided deposition of alumina on 156 x 156 mm2, mono- and multi crystalline silicon wafers for solar cell applications. The alumina layers showed excellent passivation. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/hr. Finally, we report on the process of commercializing this technology.

Characterization of Nanoporous Silicon Layer to Reduce the Optical Losses of Crystalline Silicon Solar Cells

2007 ◽  
Vol 7 (11) ◽  
pp. 3713-3716 ◽  
Author(s):  
Soohong Lee ◽  
Eunjoo Lee
Keyword(s):  
Surface Modification ◽  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Wavelength Region ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Optical Losses ◽  
Crystalline Silicon Solar Cells

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated using SEM. The formation of a nanoporous Si layer on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900 nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

Influence of ITO layer application on electrical parameters of silicon solar cells with screen printed front electrode

2016 ◽  
Vol 33 (3) ◽  
pp. 172-175 ◽  
Author(s):  
Kazimierz Drabczyk ◽  
Jaroslaw Domaradzki ◽  
Grazyna Kulesza-Matlak ◽  
Marek Lipinski ◽  
Danuta Kaczmarek
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Content Type ◽  
Crystalline Silicon Solar Cells ◽  
Screen Printed

Purpose The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell. Design/methodology/approach Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements. Findings The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed. Originality/value The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

Review and Development of Crystalline Silicon Solar Cell with Intelligent Materials

2011 ◽  
Vol 321 ◽  
pp. 196-199
Author(s):  
Ying Lian Wang ◽  
Jun Yao Ye
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Crystalline Silicon ◽  
Clean Energy ◽  
Production Costs ◽  
Silicon Solar Cells ◽  
Human Society ◽  
Intelligent Materials ◽  
Crystalline Silicon Solar Cells ◽  
The Future

The application of solar cell has offered human society renewable clean energy. As intelligent materials, crystalline silicon solar cells occupy absolutely dominant position in photovoltaic market, and this position will not change for a long time in the future. Thereby increasing the efficiency of crystalline silicon solar cells, reducing production costs and making crystalline silicon solar cells competitive with conventional energy sources become the subject of today's PV market. The working theory of solar cell was introduced. The developing progress and the future development of mono-crystalline silicon (c-Si), poly-crystalline silicon (p-Si) and amorphous silicon (a-Si) solar cell have also been introduced.

Electronically stimulated degradation of silicon solar cells

2006 ◽  
Vol 21 (1) ◽  
pp. 5-12 ◽  
Author(s):  
J. Schmidt ◽  
K. Bothe ◽  
D. Macdonald ◽  
J. Adey ◽  
R. Jones ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Formation ◽  
Crystalline Silicon ◽  
Short Review ◽  
Current Status ◽  
Silicon Solar Cells ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Characteristic Features ◽  
Oxygen Complexes

Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

scholarly journals Hybrid(Luminescent and Fresnel ) Concentrators to Improve Solar Panel Conversion Efficiency

2011 ◽  
Vol 8 (2) ◽  
pp. 577-580 ◽  
Author(s):  
Baghdad Science Journal
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Silicon Solar Cells ◽  
The Sun ◽  
Crystalline Silicon Solar Cells ◽  
Si Solar Cell ◽  
Irradiance Spectrum

The spectral response of the Si solar cell does not coincidence with the sun irradiance spectrum, so the efficiency of the Si solar cell is not high. To improve the Si solar cell one try to make use of most region of the sun spectrum by using dyes which absorb un useful wavelengths and radiate at useful region of spectrum (by stock shift). Fluorescence's dye is used as luminescent concentrator to increase the efficiency of the solar cell. The results show that the performance efficiency and out power for crystalline silicon solar cells are improved.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 426 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225–400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

Measured and Simulated Temperature Dependence of A-Si:H Solar Cell Parameters

1996 ◽  
Vol 420 ◽  
Author(s):  
H. Stiebig ◽  
Th. Eickhoff ◽  
J. Zimmer ◽  
C. Beneking ◽  
H. Wagner
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cell Parameters ◽  
Crystalline Silicon Solar Cells ◽  
Device Modelling

AbstractIn contrast to the successful application of analytic equations to the current-voltage behaviour of crystalline silicon solar cells in the dark and under AM 1.5 illumination, the description of a-Si:H solar cells parameters requires device modelling concepts taking the full set of semiconductor equations into account. This in particular holds for the explanation of the temperature dependence (225-400K) of experimentally determined a-Si:H p-i-n solar cell parameters. Device modelling calculations show that the observed decrease of the short circuit current at AM 1.5 with lower T is much more effected by the additional charge trapped in the tail states and recharging of defect states than by the broadening of the gap. The induced electric field distortion blocks the extraction of photo generated holes. The open circuit voltage Voc increases with lower T which is caused by the same trapping effect.

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