Investigation of non-local transport phenomena in small semiconductor devices

1990 ◽  
Vol 1 (3) ◽  
pp. 307-312 ◽  
Author(s):  
Antonio Gnudi ◽  
Farouk Odeh ◽  
Massimo Rudan
2000 ◽  
Vol 42 (10) ◽  
pp. 1067-1076 ◽  
Author(s):  
X L Zou ◽  
A Géraud ◽  
P Gomez ◽  
M Mattioli ◽  
J L Ségui ◽  
...  

2007 ◽  
Vol 24 (9) ◽  
pp. 2621-2623 ◽  
Author(s):  
Sun Hong-Juan ◽  
Ding Xuan-Tong ◽  
Yao Liang-Hua ◽  
Feng Bei-Bin ◽  
Li Wei ◽  
...  

Entropy ◽  
2018 ◽  
Vol 20 (10) ◽  
pp. 760 ◽  
Author(s):  
Johan Anderson ◽  
Sara Moradi ◽  
Tariq Rafiq

The numerical solutions to a non-linear Fractional Fokker–Planck (FFP) equation are studied estimating the generalized diffusion coefficients. The aim is to model anomalous diffusion using an FFP description with fractional velocity derivatives and Langevin dynamics where Lévy fluctuations are introduced to model the effect of non-local transport due to fractional diffusion in velocity space. Distribution functions are found using numerical means for varying degrees of fractionality of the stable Lévy distribution as solutions to the FFP equation. The statistical properties of the distribution functions are assessed by a generalized normalized expectation measure and entropy and modified transport coefficient. The transport coefficient significantly increases with decreasing fractality which is corroborated by analysis of experimental data.


2018 ◽  
Vol 3 (3) ◽  
pp. 110-126 ◽  
Author(s):  
J. Nikl ◽  
M. Holec ◽  
M. Zeman ◽  
M. Kuchařík ◽  
J. Limpouch ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 253-256
Author(s):  
F. Gámiz ◽  
J. B. Roldán ◽  
J. A. López-Villanueva

Electron transport properties of strained-Si on relaxed Si1 – xGex channel MOSFETs have been studied using a Monte Carlo simulator. The steady- and non-steady-state high-longitudinal field transport regimes have been described in detail. Electronvelocity- overshoot effects are studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. The impact of the Si layer strain on the performance enhancement are described in depth in terms of microscopic magnitudes.


1997 ◽  
Vol 39 (12B) ◽  
pp. B173-B188 ◽  
Author(s):  
J D Callen ◽  
M W Kissick
Keyword(s):  

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
R. S. Deacon ◽  
A. Oiwa ◽  
J. Sailer ◽  
S. Baba ◽  
Y. Kanai ◽  
...  

Abstract Devices to generate on-demand non-local spin entangled electron pairs have potential application as solid-state analogues of the entangled photon sources used in quantum optics. Recently, Andreev entanglers that use two quantum dots as filters to adiabatically split and separate the quasi-particles of Cooper pairs have shown efficient splitting through measurements of the transport charge but the spin entanglement has not been directly confirmed. Here we report measurements on parallel quantum dot Josephson junction devices allowing a Josephson current to flow due to the adiabatic splitting and recombination of the Cooper pair between the dots. The evidence for this non-local transport is confirmed through study of the non-dissipative supercurrent while tuning independently the dots with local electrical gates. As the Josephson current arises only from processes that maintain the coherence, we can confirm that a current flows from the spatially separated entangled pair.


2017 ◽  
Vol T170 ◽  
pp. 014018 ◽  
Author(s):  
J Romazanov ◽  
D Borodin ◽  
A Kirschner ◽  
S Brezinsek ◽  
S Silburn ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document