An Electrochemical Transducer Based on a Pentacene Double-Gate Thin-Film Transistor

2012 ◽  
Vol 24 (2) ◽  
pp. 214-218 ◽  
Author(s):  
Martin Göllner ◽  
Georg Glasbrenner ◽  
Bert Nickel
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Double Gate ◽  
Electrochemical Transducer

Highly Stable Double-Gate Ga–In–Zn–O Thin-Film Transistor

2010 ◽  
Vol 31 (8) ◽  
pp. 812-814 ◽  
Author(s):  
Kyoung-Seok Son ◽  
Ji-Sim Jung ◽  
Kwang-Hee Lee ◽  
Tae-Sang Kim ◽  
Joon-Seok Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Double Gate

scholarly journals Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 233 ◽  
Author(s):  
Feng-Tso Chien ◽  
Chih-Ping Hung ◽  
Hsien-Chin Chiu ◽  
Tsung-Kuei Kang ◽  
Ching-Hwa Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Stress Test ◽  
Thin Film Transistor ◽  
Double Gate ◽  
Silicon Thin Film ◽  
Hot Carrier ◽  
Single Top ◽  
Lightly Doped Drain ◽  
A Current

A current improved and electric field reduced double-gate (DG) polycrystalline silicon thin-film transistor with two-step source/drain (DGTSD-TFT) design is proposed and demonstrated in this study. The two-step source/drain (TSD) design, which consists of a raised source/drain (RSD) area together with a partial gate overlapped lightly doped drain (P-GOLDD) structure, can lower the device drain electric field (DEF) to reveal a better device performance. Comparisons have been made with respect to a traditional single top gate (STG) device. The operation current of the proposed DGTSD-TFT is almost twice as large as that of the STG structure. The OFF-state leakage current and kink effect, as well as the ON/OFF current ratio for this double-gate and two-step source/drain structure, are also improved simultaneously because of a reduced DEF. A hot carrier stress test reveals that that two-step source/drain structure can achieve more stable device characteristics than the traditional device.

Double-gate thin-film transistor

1965 ◽  
Vol 1 (2) ◽  
pp. 49 ◽  
Author(s):  
D. Abraham ◽  
T.O. Poehler
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Double Gate

scholarly journals Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO-=SUB=-2-=/SUB=-/La-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/HfO-=SUB=-2-=/SUB=- (HLH) Sandwich Gate Dielectrics

2020 ◽  
Vol 54 (10) ◽  
pp. 1098
Author(s):  
L. Ramesh ◽  
S. Moparthi ◽  
P.K. Tiwari ◽  
V.R. Samoju ◽  
G.K. Saramekala
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Active Layer ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Hafnium Dioxide ◽  
Subthreshold Swing ◽  
Oxide Material ◽  
Double Gate ◽  
Pixel Intensity

In this paper, the electrical properties of a double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) is investigated. To increase the ON-current and pixel intensity, and control the voltage stress bias, the conventional gate oxide material (silicon dioxide SiO2) is replaced with a tri-high-k gate dielectric layer, hafnium dioxide HfO2/lanthanum oxide La2O3/hafnium dioxide HfO2 (HLH). Further, the performance of the proposed DG-DAL structure is compared with the single-active-layer (SAL) and dual-active-layer (DAL) TFTs. The amorphous indium-gallium zinc-oxide (a-IGZO) is considered as active layer for SAL channel region, and on the other hand, a-IGZO and indium-tin-oxide (ITO) are considered as active layers for DAL TFT and DG-DAL TFT channel regions. The parameters such as OFF-current, ON-current, ION/IOFF ratio, threshold voltage, mobility, average subthreshold swing, etc. are evaluated for the considered structures. It is observed that the DG-DAL TFT with HLH dielectric offers high ON-current of 3.85·10-3 A/μm, very low OFF-current of 2.53·10-17 A/μm, very high ION/IOFF ratio of 1.51·1014, the threshold voltage of 0.642 V, high mobility of 35 cm2·v-1·s-1 and average subthreshold swing of 127.84 mV/dec. A commercial TCAD simulation tool ATLAS from SilvacoTM is used to investigate all the parameters for considered structures. Keywords: single active layer (SAL), dual active layer (DAL), double-gate dual active layer (DG-DAL), InGaZnO (IGZO), InSnO (ITO), thin-film transistor (TFT), HfO2/La2O3/HfO2 (HLH).

Amorphous silicon thin film transistor with a buried double-gate structure

2003 ◽  
Author(s):  
Y. Kaneko ◽  
K. Tsutsui ◽  
H. Matsumaru ◽  
H. Yamamoto ◽  
T. Tsukada
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Double Gate ◽  
Silicon Thin Film ◽  
Gate Structure

Analysis of double-gate thin-film transistor

1967 ◽  
Vol 14 (2) ◽  
pp. 69-74 ◽  
Author(s):  
H.R. Farrah ◽  
R.F. Steinberg
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Double Gate
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