scholarly journals Front Cover: The Electronic Properties of Ni(PNN) Pincer Complexes Modulate Activity in Catalytic Hydrodehalogenation Reactions (Eur. J. Inorg. Chem. 47/2020)

2020 ◽  
Vol 2020 (47) ◽  
pp. 4415-4415
Author(s):  
Denan Wang ◽  
James R. Gardinier
Keyword(s):  
Electronic Properties ◽  
Pincer Complexes ◽  
Front Cover

scholarly journals Front Cover: Metal‐ligand cooperative activation of HX (X=H, Br, OR) bond on Mn based pincer complexes (14/2021)

2021 ◽  
Vol 647 (14) ◽  
pp. 1397-1397
Author(s):  
Annika M. Krieger ◽  
Vivek Sinha ◽  
Adarsh V. Kalikadien ◽  
Evgeny A. Pidko
Keyword(s):  
Pincer Complexes ◽  
Front Cover ◽  
Cooperative Activation ◽  
Metal Ligand

scholarly journals Structural and Electronic Properties of Iron(0) PNP Pincer Complexes

2021 ◽  
Author(s):  
Mathias Glatz ◽  
Nikolaus Gorgas ◽  
Berthold Stöger ◽  
Ernst Pittenauer ◽  
Liliana Ferreira ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Pincer Complexes ◽  
Structural And Electronic Properties

scholarly journals Front Cover: Electronic Properties of Single Atom and Molecule Junctions (ChemElectroChem 18/2018)

2018 ◽  
Vol 5 (18) ◽  
pp. 2503-2503
Author(s):  
Akira Aiba ◽  
Madoka Iwane ◽  
Shintaro Fujii ◽  
Manabu Kiguchi
Keyword(s):  
Electronic Properties ◽  
Single Atom ◽  
Front Cover

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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