Tuning Crystal Structures and Thermoelectric Properties through Al Doping in ReSi1.75

2016 ◽  
Vol 2017 (1) ◽  
pp. 47-55 ◽  
Author(s):  
Fei Wang ◽  
Igor Veremchuk ◽  
Sven Lidin
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Al Doping

Crystal structure, phase transition and properties of indium(iii) sulfide

2020 ◽  
Vol 49 (44) ◽  
pp. 15903-15913
Author(s):  
Paweł Wyżga ◽  
Wilder Carrillo-Cabrera ◽  
Lev Akselrud ◽  
Igor Veremchuk ◽  
Jörg Wagler ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phase Transition ◽  
Dft Calculations ◽  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Structural Part ◽  
Β Phase ◽  
Structure Phase ◽  
Structure Phase Transition

This report presents studies of crystal structures of α- and β-In2S3 as well as a mechanism of the 1st order α–β phase transition. The structural part is supported by an analysis of thermoelectric properties and by DFT calculations.

Thermoelectric Properties of Ru2Si3-Based Chimney-Ladder Phases

2007 ◽  
Vol 561-565 ◽  
pp. 463-466 ◽  
Author(s):  
Kyosuke Kishida ◽  
Akira Ishida ◽  
Katsushi Tanaka ◽  
Haruyuki Inui
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Electron Concentration ◽  
Valence Electron ◽  
Valence Electron Concentration ◽  
Compositional Range ◽  
Wide Compositional Range ◽  
P Type ◽  
Semiconducting Behavior

The variations of the crystal structures and thermoelectric properties of the Ru1-xRexSiy chimney-ladder phases were studied as a function of the Re concentration. A series of chimney-ladder phases with a compositional formula of Ru1-xRexSi1.539+0.178x are formed in a wide compositional range, 0.14 ≤ x ≤ 0.76. The composition of the chimney-ladder phase is systematically deviated from the idealized composition satisfying the valence electron concentration rule: VEC=14. Measurements of thermoelectric properties reveal that the chimney-ladder phases exhibit n-type semiconducting behavior at low Re concentrations and p-type semiconducting behavior at high Re concentrations, which are well consistent with the prediction based on the deviation of the composition of the chimney-ladder phase from the idealized composition.

Structural evolvement and thermoelectric properties of Cu3−xSnxSe3 compounds with diamond-like crystal structures

2014 ◽  
Vol 43 (44) ◽  
pp. 16788-16794 ◽  
Author(s):  
Jing Fan ◽  
Walter Schnelle ◽  
Iryna Antonyshyn ◽  
Igor Veremchuk ◽  
Wilder Carrillo-Cabrera ◽  
...  
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Composition Changes

When the composition changes from a Cu-rich to a Sn-rich one, Cu3−xSnxSe3 shows a metal-to-semiconductor transition with increasing x.

Crystal Structures and Thermoelectric Properties of Sm-Filled Skutterudite Compounds Smy Fex Co4 - x Sb12

2007 ◽  
Vol 25 (6) ◽  
pp. 739-743 ◽  
Author(s):  
Liu Taoxiang ◽  
Tang Xinfeng ◽  
Xie Wenjie ◽  
Yan Yonggao ◽  
Zhang Qingjie
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Filled Skutterudite

Sintering Temperature-Dependent Chemical Defects and the Effect on the Electrical Resistivity of Thermoelectric ZnO

2014 ◽  
Vol 1 (1-2) ◽  
Author(s):  
Yu Zhao ◽  
Ashok Kumar ◽  
Giti A. Khodaparast ◽  
Amnah Eltahir ◽  
Hsin Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Property ◽  
Thermoelectric Properties ◽  
Carrier Density ◽  
Sintering Temperature ◽  
Sharp Decrease ◽  
Synthesis Temperature ◽  
Temperature Dependent ◽  
Al Doping

AbstractThermoelectric properties of zinc oxide (ZnO) are largely influenced by its electrical property. In this paper, we investigated the correlation between the electrical resistivity and synthesis temperature for aluminum (Al)-modified ZnO. At constant Al doping, the electrical resistivity of ZnO exhibited sharp decrease with increase in sintering temperature due to the increased carrier density resulting from Al

ChemInform Abstract: Synthesis, Crystal Structures and High-Temperature Thermoelectric Properties of Spinel-Type Cobalt Ruthenium Oxides.

ChemInform ◽  
2009 ◽  
Vol 40 (15) ◽  
Author(s):  
Tetsuya Kawano ◽  
Junichi Takahashi ◽  
Takeshi Okutani ◽  
Takahiro Yamada ◽  
Hisanori Yamane
Keyword(s):  
High Temperature ◽  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Spinel Type ◽  
Ruthenium Oxides

scholarly journals Structure and Thermoelectric Properties of New Layered Compounds in the Quaternary System Cs-Pb-Bi-Te

2001 ◽  
Vol 691 ◽  
Author(s):  
Kuei-Fang Hsu ◽  
Duck-Young Chung ◽  
Sangeeta Lal ◽  
Tim Hogan ◽  
Mercouri G. Kanatzidis
Keyword(s):  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Homologous Series ◽  
Quaternary System ◽  
Layered Structures ◽  
Layered Compounds ◽  
Preliminary Results ◽  
New Compounds

ABSTRACTBy introducing of various equivalents of PbTe into the layered framework of CsBi4Te6, the four new compounds CsPbBi3Te6 (1), CsPb2Bi3Te7 (2), CsPb3Bi3Te8 (3) and CsPb4Bi3Te9 (4), were discovered. The compounds adopt layered structures built up of anionic slabs of progressively increasing thickness. The [PbmBi3Te5+m]- (m = 1, 2, 3, 4) slabs in the four structures can be viewed as fragments excised from the PbTe-type structures with 4-, 5-, 6- and 7-monolayers, respectively. As prepared, these materials are off-stoichiometric and n-type conductors. We present preliminary results of the crystal structures and thermoelectric properties of these materials and classify them as members of the new homologous series CsPbmBi3Te5+m (m = 1 to 4).

scholarly journals The half Heusler system Ti1+xFe1.33−xSb–TiCoSb with Sb/Sn substitution: phase relations, crystal structures and thermoelectric properties

2018 ◽  
Vol 47 (3) ◽  
pp. 879-897 ◽  
Author(s):  
A. Tavassoli ◽  
A. Grytsiv ◽  
G. Rogl ◽  
V. V. Romaka ◽  
H. Michor ◽  
...  
Keyword(s):  
Phase Equilibria ◽  
Crystal Structures ◽  
Thermoelectric Properties ◽  
Phase Relations ◽  
Electron Localization Function ◽  
Electron Localization ◽  
Heusler Phase ◽  
Localization Function ◽  
Sn Substitution

Phase equilibria for Heusler Phase Ti1+xFe1.33−xSb at 800 °C and calculated isosurfaces (ϒ = 0.42) of the electron localization function in TiFe1.25Sb.

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