Optical Properties and Energy Transfer of NaCaPO4:Ce3+,Tb3+ Phosphors for Potential Application in Light-Emitting Diodes

2010 ◽  
Vol 2010 (29) ◽  
pp. 4636-4642 ◽  
Author(s):  
Ning Guo ◽  
Yanhua Song ◽  
Hongpeng You ◽  
Guang Jia ◽  
Mei Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Energy Transfer ◽  
Potential Application ◽  
Light Emitting Diodes ◽  
Light Emitting

Optical properties and energy transfer of a novel KSrSc2(PO4)3:Ce3+/Eu2+/Tb3+ phosphor for white light emitting diodes

2015 ◽  
Vol 44 (9) ◽  
pp. 4080-4087 ◽  
Author(s):  
Mengmeng Jiao ◽  
Wenzhen Lv ◽  
Wei Lü ◽  
Qi Zhao ◽  
Baiqi Shao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Energy Transfer ◽  
White Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
White Light Emitting Diodes

Tunable blue to blue-green novel KSrSc2(PO4)3:Ce3+,Tb3+ and KSrSc2(PO4)3:Eu2+,Tb3+ phosphors have been prepared and investigated in detail.

Yellow-Emitting Sr9Sc(PO4)7:Eu2+, Mn2+Phosphor with Energy Transfer for Potential Application in White Light-Emitting Diodes

2013 ◽  
Vol 2014 (5) ◽  
pp. 870-874 ◽  
Author(s):  
Xiaoling Dong ◽  
Jiahua Zhang ◽  
Liangliang Zhang ◽  
Xia Zhang ◽  
Zhendong Hao ◽  
...  
Keyword(s):  
Energy Transfer ◽  
White Light ◽  
Potential Application ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
White Light Emitting Diodes

scholarly journals High-performance quasi-2D perovskite light-emitting diodes: from materials to devices

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Li Zhang ◽  
Changjiu Sun ◽  
Tingwei He ◽  
Yuanzhi Jiang ◽  
Junli Wei ◽  
...  
Keyword(s):  
Energy Transfer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Structural Characteristics ◽  
Quantum Yields ◽  
Research Directions ◽  
Light Emitting ◽  
Perovskite Materials ◽  
Quantum Confinement Effects ◽  
Semiconducting Properties

AbstractQuasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

Suppression of Halide Migration and Immobile Ionic Surface Passivation for Blue Perovskite Light-Emitting Diodes

2022 ◽  
Author(s):  
Chan Beom Park ◽  
Yun Seop Shin ◽  
Yung Jin Yoon ◽  
Hyungsu Jang ◽  
Jung Geon Son ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diodes ◽  
Surface Passivation ◽  
Optoelectronic Properties ◽  
Light Emitting ◽  
Perovskite Nanocrystals

Cs-based perovskite nanocrystals (PeNCs) have been considered to be superb emitters for perovskite light-emitting diodes (PeLEDs) due to their remarkable optoelectronic properties. Still, poor optical properties are mainly attributed to...

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