Body Bias Dependence of Bias Temperature Instability (BTI) in Bulk FinFET Technology

Experimental study of the Adaptive Body Bias on-Chip (ABBoC) for bias temperature instability (BTI) and Process Variations (PV) compensation

2018 7th International Conference on Modern Circuits and Systems Technologies (MOCAST) ◽

10.1109/mocast.2018.8376627 ◽

2018 ◽

Author(s):

Hassan Mostafa

Keyword(s):

Experimental Study ◽

Process Variations ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Adaptive Body Bias ◽

On Chip ◽

Body Bias

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Degradation caused by Negative Bias temperature instability depending on Body Bias on NMOS or PMOS in 65 nm bulk and thin-BOX FDSOI processes

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947535 ◽

2017 ◽

Author(s):

Ryo Kishida ◽

Kazutoshi Kobayashi

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Body Bias

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Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2013.10.001 ◽

2014 ◽

Vol 91 ◽

pp. 127-129

Author(s):

Hyojune Kim ◽

Yonghan Roh

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Body Bias

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Bias Temperature Instability Depending on Body Bias through Buried Oxide (BOX) Layer in a 65 nm Fully-Depleted Silicon-On-Insulator Process

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405121 ◽

2021 ◽

Author(s):

Ryo Kishida ◽

Ikuo Suda ◽

Kazutoshi Kobayashi

Keyword(s):

Silicon On Insulator ◽

Temperature Instability ◽

Fully Depleted ◽

Buried Oxide ◽

Bias Temperature Instability ◽

Body Bias

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Negative Bias Temperature Instability by Body Bias on Ring Oscillators in Thin BOX Fully-Depleted Silicon on Insulator Process

10.7567/ssdm.2016.ps-3-08 ◽

2016 ◽

Author(s):

R. Kishida ◽

K. Kobayashi

Keyword(s):

Silicon On Insulator ◽

Negative Bias ◽

Ring Oscillators ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Fully Depleted ◽

Bias Temperature Instability ◽

Body Bias

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Cited By ~ 2

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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