An ultra-high-voltage high-speed switching power transistor with new fine emitter structure

1983 ◽  
Vol 66 (7) ◽  
pp. 108-116 ◽  
Author(s):  
Yasutaka Nakatani ◽  
Isanu Kuryu
Keyword(s):  
High Voltage ◽  
High Speed ◽  
Power Transistor ◽  
Switching Power ◽  
High Speed Switching ◽  
Ultra High Voltage

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

A New High Speed Switching Bipolar Power Transistor with Corrugated Base Junctions

2000 ◽  
Author(s):  
Chanho Park ◽  
Youngsik Yoon ◽  
Deok J. Kim ◽  
Kwyro Lee
Keyword(s):  
High Speed ◽  
Power Transistor ◽  
High Speed Switching

950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

2006 ◽  
Vol 911 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Charlotte Jonas ◽  
Bradley Heath ◽  
James Richmond ◽  
Anant Agarwal ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
High Voltage ◽  
High Speed ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Blocking Voltage ◽  
Layer Resistance ◽  
High Speed Switching ◽  
Device Operation ◽  
Drift Layer

AbstractFabrication and characteristics of high voltage, high speed DMOSFETs in 4H-SiC are presented. The devices were built on 1.2×1016 cm-3 doped, 6 mm thick n-type epilayer grown on a n+ 4H-SiC substrate. A specific on-resistance of 8.7 mW-cm2 and a blocking voltage of 950 V were measured. Device characteristics were measured for temperatures up to 300oC. An increase of specific on-resistance by 35% observed at 300oC, when compared to the value at room temperature. This is due to a negative shift in MOS threshold voltage, which decreases the MOS channel resistance at elevated temperatures. This effect cancels out the increase in drift layer resistance due to a decrease in bulk electron mobility at elevated temperature, resulting in a temperature stable on-resistance. The device operation at temperatures up to 300 oC and high speed switching results are also reported in this paper.

Research on VRM in RF PA System Based on Enhancement Mode GaN HEMT

2020 ◽  
Vol 1014 ◽  
pp. 149-156
Author(s):  
Yu Jie Cheng ◽  
Jian Hua Xu ◽  
Hai Feng Cheng
Keyword(s):  
High Voltage ◽  
High Power ◽  
High Frequency ◽  
High Speed ◽  
Main Role ◽  
Rf Power ◽  
Power Transistor ◽  
Peak Voltage ◽  
Enhancement Mode ◽  
Gan Hemt

As a key part of the RF PA system, VRM (Voltage-Regulate-Modulator), whose main role is to offer pulse voltage for RF power transistor, is often slighted. As a result, VRM has been a restraining factor now. In order to realize the needs of high speed and high frequency, a new method based on enhancement mode GaN HEMT of designing VRM is proposed in this paper. By using this method, the rise time and fall time of VRM could be as about 10ns with the peak voltage 75V and the peak current 150A, which is quite suitable for driving high voltage and high power GaN-based RF power transistor.

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