Epitaxial growth of WOxnanorods on single-crystal tungsten substrate

2008 ◽  
Vol 91 (7) ◽  
pp. 20-24 ◽  
Author(s):  
Yoshitaka Shingaya ◽  
Tomonobu Nakayama
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Tungsten Substrate

Oxide Mediated Epitaxial Growth of CoSi2 in a Single Deposition Step

1999 ◽  
Vol 564 ◽  
Author(s):  
S. Ohmi ◽  
R. T. Tung
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Diffusion Barrier ◽  
Blocking Layer ◽  
Deposition Step

AbstractA number of modifications of the oxide-mediated epitaxy (OME) technique are presented which have enabled the growth of thick (∼25–40nm) epitaxial CoSi2 layers in a single deposition sequence. The uses of (a) a thin Ti cap, (b) a thin Ti blocking layer, (c) the codeposition of Co-rich CoSix, and (d) the co-deposition of Col−xTix. have all been shown to lead to improved epitaxial quality over the pure Co OME process, for Co thickness greater than 6nm. Essentially uniform, single crystal silicide layers of over 25nm have been grown in a single deposition step. These results are supportive of the proposed role of a diffusion barrier/kinetics retarder on the part of the interlayer in the OME and the Ti-interlayer mediated epitaxy processes.

MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN

1985 ◽  
Vol 14 (5) ◽  
pp. 633-644 ◽  
Author(s):  
M. Matloubian ◽  
M. Gershenzon
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth

scholarly journals Epitaxial Growth of Co Thin Films on SrTiO3 Single-Crystal Substrates

2010 ◽  
Vol 34 (2) ◽  
pp. 78-91 ◽  
Author(s):  
O. Yabuhara ◽  
Y. Nukaga ◽  
M. Ohtake ◽  
F. Kirino ◽  
M. Futamoto
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Epitaxial Growth

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Epitaxial growth of faceted SiC single-crystal nanoparticles using a carbon nanocapsule as a reacting template

2009 ◽  
Vol 116 (2-3) ◽  
pp. 497-502 ◽  
Author(s):  
Chien-Chong Chen ◽  
Huei-Ping Tseng ◽  
Tsung-Yen Huang ◽  
Jung-Chang Kuo ◽  
Gan-Lin Huang
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth

Epitaxial Growth of Single-Crystal Ultrathin Films of Bismuth on Si(111)

2000 ◽  
Vol 39 (Part 1, No. 7B) ◽  
pp. 4567-4570 ◽  
Author(s):  
Tadaaki Nagao ◽  
Takumi Doi ◽  
Takeharu Sekiguchi ◽  
Shuji Hasegawa
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Ultrathin Films
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